Abstract:Erbium films were grown on single crystal Si(111) substrates by electron beam vapor deposition. The microstructures of the erbium films were systematically investigated by X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy. Results indicate that the surface morphologies and microstructures of the erbium films with Si as substrates are susceptible to the substrate temperatures when the deposition rates are fixed. The pure erbium films with columnar grains were obtained at temperatures below 200 degrees C, but in the films grown at temperatures higher than 350 degrees C, some pinholes that are composed of erbium silicides were found. The pinholes have triangular shapes which is in accordance with the geometry of the underlying Si(111) substrate. The films grown at a substrate temperature equal or greater than 450 degrees C have cracks which would be formed due to the different shrinkage degree of erbium and silicon when the substrate temperature was cooled down to room temperature. The films grown at 200 degrees C show the (002) preferred orientation, which is consistent to the prediction by the theory of surface energy minimization. The deposition rate and deposition time are considered as factors to affect the reaction of the erbium film and the silicon substrate. (C) 2012 Elsevier Ltd. All rights reserved.

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