Abstract:The Er3+-doped Al2O3 films were prepared by sintering Er-ion-implanted γ-AlOOH xerogel films on SiO2/Si(100) substrates. In a cycle, the γ-AlOOH xerogel films about 50 nm thick were dip-coated using aluminium isopropoxide-derived γ-AlOOH sols; the Er ions were then implanted into the γ-AlOOH xerogel films using an ion energy of 45 keV with different doses of 5×1014 to 1×1016 ions cm−2. Er3+-doped Al2O3 films were formed after 1, 2, and 4 cycles of dip-coating and implantation at different sintering temperatures of 800–1200 °C. The photoluminescence (PL) spectra were observed with a main peak at 1.533 μm and a side peak at 1.549 μm for all the Er3+-doped Al2O3 films. The intensity of PL peak of the Er3+-doped Al2O3 film obtained after 4 cycles with 5×1015 ions cm−2 dose at every cycle and sintered at 900 °C for 5 h, increased by about 10 and 3 times compared with that of the films obtained after 1 and 2 cycles. At the same sintering temperature of 900 °C, the intensity of PL peak of the Er3+-doped Al2O3 films first increased with the increase of dose from 5×1014 to 5×1015 ions cm−2 at every cycle, and then a saturation tendency was observed when the dose further was increased to 1×1016 ions cm−2. For the samples using 5×1015 ions cm−2 dose at every cycle, the PL intensity increased with the increase of sintering temperature from 800 to 1200 °C.

Study on the luminescence and reflection spectra of Al2O 3 doped Er2O3 films on Si Substrates

Preparation and Photoluminescence Properties of Eu3+-Doped Al2O3 Films on Silicon Substrates by the Sol-gel Method

Low Reflectivity ErAlO Film on Si As Anti-Reflecting Coating in Solar Cells

Optical Constants of Al-Doped Er2o3 Films Prepared by Radio Frequency Reactive Magnetron Sputtering

Surface Topography and Optical Properties of Al-doped ZnO Thin Films by Sol-gel Process

Optical Constants of Er2O3-Al2O3 Films Studied by Spectroscopic Ellipsometry

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Photoluminescence Properties of Er3+-doped Al2O3 Film Synthesized from Er-ion-implanted Γ-Alooh Xerogel

Study on Vacuum Ultraviolet Spectra of Amorphous Er2O3 Films on Si(001) Substrates

Optical Absorption and Emission Properties of Er3+ Doped Mixed Alkali Borosilicate Glasses

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Microstructures and properties of Er-doped Al2O3 thin films synthesized by ion beam assisted deposition

Fabrication and characterization of highly luminescent Er3+:Al2O3 thin films with optimized growth parameters

Enhanced Emission of Er3+ from Alternately Er Doped Si-Rich Al2o3 Multilayer Film with Si Nanocrystals As Broadband Sensitizers

Spectroscopic Properties Of Er3+/Yb3+ Co-Doped 50sio(2)-20al(2)O(3)-30caf(2) Glass And Glass Ceramics

Amorphous Er 2 O 3 Films for Antireflection Coatings

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Photoluminescence Properties of Er-Doped Si/Al_2O_3 Multilayer Films

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Near-infrared Luminescence of Erbium Doped Ga2O3 Films and Devices Based on Silicon: Realization of Energy Transfer