Abstract:Prior studies have shown that photoluminescence from Er3+ impurities in silicon is severely limited at room temperature by non-radiative relaxation and solid solubility; and room temperature emission from Er3+ in oxide-based hosts becomes diminished at high erbium concentrations. This work presents studies of thin films (0.2 micron thick) prepared by vacuum co-evaporation from elemental sources (Er, Si and Si/Ge) followed by vacuum annealing (600 degrees C); materials of this type, which are produced with high Er3+ concentrations, are shown to be capable of yielding strong room-temperature photoluminescence. Alloy films of Si-Er-O and Si-Ge-Er-O, containing (20 +/- 2) at. % Er and incorporating (16 +/- 2) at. % O (introduced via vacuum scavenging reactions), exhibit emission bands with dominant components at 1.51 and 1.54 micron (~0.04-micron overall spectral widths). Results are discussed in terms of Er-O complex formation and effects of local randomness on cooperative inter-Er3+ energy transfer among thermal-broadened and local-field Stark-split 4I13/2 to 4I15/2 transitions. Advantages of scalability and low-cost associated with this method of producing optically active silicon-based materials are discussed.

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Study of plasma-deposited amorphous SiO2 films using infrared absorption techniques

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Study on the luminescence and reflection spectra of Al2O 3 doped Er2O3 films on Si Substrates

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Amorphous Er 2 O 3 Films for Antireflection Coatings

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Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Structural Characteristics of Amorphous Er<SUB>2</SUB>O<SUB>3</SUB> Films Grown on Si (001) by Reactive Evaporation: Structural Characteristics of Amorphous Er<SUB>2</SUB>O<SUB>3</SUB> Films Grown on Si (001) by Reactive Evaporation

1.54 Μ M Photoluminescence Emission and Oxygen Vacancy As Sensitizer in Er-doped HfO2 Films

Structural and Photoluminescence Properties of Er2O3Films by Sol-Gel Method

Room-Temperature Photoluminescence from Er3+ in Si-Er-O and Si-Ge-Er-O Thin Films at High Erbium Concentrations

Study on Photoluminescence Characteristics of SiOx: Er Thin Films

Structural And Electrical Characterization Of Ultrathin Er2o3 Films Grown On Si(001) By Reactive Evaporation

Phase Transformation and Photoluminescence Properties of Er Silicate Films by Sol-Gel Method

In Situ Photoemission Study of Interface and Film Formation During Epitaxial Growth of Er2O3 Film on Si(001) Substrate

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Annealing Effects on the Structure and Electrical Characteristics of Amorphous Er 2 O 3 Films

Optical Constants of Al-Doped Er2o3 Films Prepared by Radio Frequency Reactive Magnetron Sputtering