Abstract:SiO2:Si:Er films were deposited on n+-Si substrate using the magnetron sputtering technique, and then Au/ SiO2: Si:Er /n+-Si diodes were fabricated. Both Er3+ photoluminescence (PL) from the SiO2: Si: Er/n+-Si and electroluminescence (EL) from the Au/SiO2: Si: Er /n+-Si diodes were studied. The 1.54 micrometers PL intensity ratio of SiO2: Si: Er/n+-Si to that of the SiO2: Er/n+-Si measured under identical conditions can be as large as ~30. While the 1.54 micrometers EL intensity ratio of an Au/ SiO2:Si:Er/n+-Si diode to that of an Au/SiO2:Er/n+-Si diode measured under identical conditions can be as large as 6. We also deposited nanoscale (SiO2:Er/Si(1.0~4.0nm)/SiO2:Er) sandwich structure, in which the silicon layer between the two SiO2:Er barriers was 1.0~4.0 nm thick with an interval of 0.2 nm, on both n+-Si and p-Si substrates. Each EL spectrum of the Au/nanoscale (SiO2:Er/Si/SiO2:Er)/n+-Si diodes can be fitted by three Gaussian bands with peak energies of 0.757 eV (1.64 micrometers ), 0.806 eV (1.54 micrometers ) and 0.860 eV (1.44 micrometers ), and full widths at half maximum of 0.052, 0.045 and 0.055 eV, respectively. Among the Au/nanoscale (SiO2:Er/Si/SiO2:Er)/n+-Si diodes with the Si layers having various thicknesses, the EL intensities of the 1.64, 1.54 and 1.44 micrometers bands of the diode with a 1.6 nm Si layer attain maxima which are 22, 8 and 7 times larger than those of the control diode without any Si layer (Au/nanoscale SiO2:Er/n+-Si), respectively.

Fine Structure and High Intensity of Photoluminescence from Er Doped in Ni–Si–O Compounds

Ni-Enhanced Photoluminescence of Er~(3+) Doped in Si-Rich Nitride

Dependence of 1.54 Mu M Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich Sio2 Films Deposited by Magnetron Sputtering

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

[Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Film and Er-doped Silicon-Rich Silicon Nitride Film and Its Annealing Behavior].

An Effect of Si Nanoparticles on Enhancing Er3+ Electroluminescence in Si-rich SiO2:Er Films

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

The study of nickel-induced enhancement of near-infrared luminescence in Si-rich silicon oxide films

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Er3+ INFRARED PHOTO- AND ELECTRO-LUMINESCENCE FROM Er-DOPED Si-RICH SILICON NITRIDE FILMS WITH VARYING Si AND Er CONTENTS

Photoluminescence properties of Er doped into C-rich SiC nanoparticle films

PHOTOLUMINESCENCE OF Er IN SiO x

Room-temperature Luminescence at 1.54 Μm and Other Wavelengths from Er-doped Si-rich Si Oxide

1.53νm photo-and electroluminescence from Er3+ in erbium silicate

Fluorescence Enhancement and Structural Development of Sol–gel Derived Er3+-doped SiO2 by Yttrium Codoping

Photoluminescence and Microstructure of Er-Doped A-Si∶h,o Deposited by PECVD *

Er3+ related 1.53μm emission from Er–Si-codoped ZnO multilayer film prepared by rf-sputtering