Abstract:Er doped Si/Al2O3 multilayer films were grown by pulsed laser deposition(PLD)and post annealed by RTA.The room temperature Er-related PL spectra were observed under excitation of the Ar+ 476 nm laser which is not Er3+ resonant pumping.This means that in the films there are indirect excitations to Er3+ luminescence and the nanosilicons produced by RTA must be sensitisers.By analyzing the PL peak intensity at 1.54 μm as a function of annealing temperature,it is found that the film annealed at 700 ℃ gets the strongest photoluminescence which is 39 times higher than that of the Er doped Al2O3 reference film produced by the same method.Furthermore,the Raman scattering spectra shows that in the film annealed at 700 ℃ the silicon is still amorphous,but therein some Si nanoclusters which are effective sentitisers to Er3+ luminescence have already appear.Then,after the films are annealed at temperatures above 700 ℃,the Si-nanoclusters crystallize increasingly well and meanwhile the sizes of Si-nanocrystals become bigger and bigger leading to the number of effective sensitisers decrease.This phenomenon causes the decline of Er3+ PL intensity.It shows that the optimal annealing temperature is 700 ℃ which is far below the annealing temperature required for Er-doped samples containing Si-nanocrystal.

Room Temperature Photoluminescence from Erbium-Doped Silica Thin Films Prepared by Cosputtering

Room temperature photoluminescence from Zr4+-doped sol–gel silica

Room Temperature Photoluminescence Property of Boron-Doped Sol–gel Silica

Enhanced Luminescence of Silica Thin Films Co-Doped with Er3+ and Yb3+

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Room-Temperature Photoluminescence from Er3+ in Si-Er-O and Si-Ge-Er-O Thin Films at High Erbium Concentrations

ROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING

Analytical Study of Thermal Annealing Behaviour of Erbium Emission in Er2O3-Sol-Gel Silica Films

Room temperature Er<sup>3+</sup>1.54 µm electroluminescence from Si-rich erbium silicate deposited by magnetron sputtering

1.53νm photo-and electroluminescence from Er3+ in erbium silicate

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Preparation And Characterization Of Erbium Doped Sol-Gel Silica Glasses

1.53 µm photo- and electroluminescence from Er(3+) in erbium silicate.

Photoluminescence Properties of Er-Doped Si/Al_2O_3 Multilayer Films

Phase Transformation and Photoluminescence Properties of Er Silicate Films by Sol-Gel Method

[Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Film and Er-doped Silicon-Rich Silicon Nitride Film and Its Annealing Behavior].

Upconversion Luminescence Property of Er3+ and Yb3+ Co-doped Germanium Silicate Glass

Sensitized Photoluminescence of Erbium Silicate Synthesized on Porous Silicon Framework

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Luminescence properties from erbium oxide nanocrystals dispersed in titania/organically modified silane composite sol–gel thin films

Photoluminescence Measurement on Erbium-Doped Silicon