Abstract:Crystalline Si (c-Si) implanted with rare-earth erbium (Er) might offer a solution to the development of silicon -based optical amplifiers and lasers at communication wavelengths for integrated silicon photonics. However, Er doped (often with oxygen) c-Si traditionally suffers from a strong thermal quenching effect in luminescence, resulting in extremely low luminous efficiency. We recently adopted a deep cooling process to treat Er/O co -doped c-Si samples. After the treatment, the thermal quenching effect is suppressed and the room-temperature photoluminescence (PL) is improved by two orders of magnitude. In this work, we report the PL optimization by tuning parameters including annealing temperature and time, deep cooling rate, O and Er concentration, and their ratio. It was found that the PL performance is maximized at O:Er concentration ratio of ~2.5 and annealing temperature of 950 degrees C for 5 min followed by a cooling rate as fast as-500 degrees C s-1. In addition, the Er/O emission has two spectrally-resolved peaks at 6472 cm-1 and 6510 cm-1 and their intensity ratio is independent of excitation power but a linear function of temperature. This unique property, likely originated from the physics of Er, Si, and O chemical composites formed in the deep cooling process, allows us to develop reliable cryogenic temperature sensors with an accuracy of +/- 1.0 K in the 4-200 K range.

Analytical Study of Thermal Annealing Behaviour of Erbium Emission in Er2O3-Sol-Gel Silica Films

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Room Temperature Photoluminescence from Erbium-Doped Silica Thin Films Prepared by Cosputtering

Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO$_{2}$:Er Films

Room-Temperature Photoluminescence from Er3+ in Si-Er-O and Si-Ge-Er-O Thin Films at High Erbium Concentrations

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Phase Transformation and Photoluminescence Properties of Er Silicate Films by Sol-Gel Method

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Enhancement of Sensitized Photoluminescence of Erbium Chloride Silicate Through Regulating Annealing

Sensitization of Er3+ Ions in Silicon Rich Oxynitride Films: Effect of Thermal Treatments

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Investigation on the Fluorescence Properties of Er-doped Sol-Gel Silica Glasses

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

Preparation And Characterization Of Erbium Doped Sol-Gel Silica Glasses

Fluorescence Optimization and Ratiometric Thermometry of Near-Infrared Emission in Erbium/oxygen-Doped Crystalline Silicon

Intense Photoluminescence from Eu-doped Silicon-Rich Silicon Oxide Films Prepared by Electron Beam Evaporation

Ellipsometric Study of the Optical Properties of Silicon-Based Si : Sio2 Composite Thin Films under Different Annealing Temperatures

MICROSTRUCTURE AND OPTICAL PROPERTIES OF ERBIUM DOPED SILICA-BASED FILMS VIA FLAME HYDROLYSIS DEPOSITION AND AEROSOL DOPING

Photoluminescence Measurement on Erbium-Doped Silicon