Luminescent Erbium-Doped Porous Silicon Bilayer Structures

LL Gu,ZH Xiong,G Chen,ZS Xiao,DW Gong,XY Hou,X Wang
DOI: https://doi.org/10.1002/1521-4095(200109)13:18<1402::aid-adma1402>3.0.co;2-u
IF: 29.4
2001-01-01
Advanced Materials
Abstract:Advanced MaterialsVolume 13, Issue 18 p. 1402-1405 Communication Luminescent Erbium-Doped Porous Silicon Bilayer Structures L. Gu, L. Gu Surface Physics Laboratory, Fudan University, Shanghai 200433 (China)Search for more papers by this authorZ. Xiong, Z. Xiong Surface Physics Laboratory, Fudan University, Shanghai 200433 (China)Search for more papers by this authorG. Chen, G. Chen Surface Physics Laboratory, Fudan University, Shanghai 200433 (China)Search for more papers by this authorZ. Xiao, Z. Xiao Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875 (China)Search for more papers by this authorD. Gong, D. Gong Surface Physics Laboratory, Fudan University, Shanghai 200433 (China)Search for more papers by this authorX. Hou, X. Hou Surface Physics Laboratory, Fudan University, Shanghai 200433 (China)Search for more papers by this authorX. Wang, X. Wang [email protected] Surface Physics Laboratory, Fudan University, Shanghai 200433 (China)Search for more papers by this author L. Gu, L. Gu Surface Physics Laboratory, Fudan University, Shanghai 200433 (China)Search for more papers by this authorZ. Xiong, Z. Xiong Surface Physics Laboratory, Fudan University, Shanghai 200433 (China)Search for more papers by this authorG. Chen, G. Chen Surface Physics Laboratory, Fudan University, Shanghai 200433 (China)Search for more papers by this authorZ. Xiao, Z. Xiao Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875 (China)Search for more papers by this authorD. Gong, D. Gong Surface Physics Laboratory, Fudan University, Shanghai 200433 (China)Search for more papers by this authorX. Hou, X. Hou Surface Physics Laboratory, Fudan University, Shanghai 200433 (China)Search for more papers by this authorX. Wang, X. Wang [email protected] Surface Physics Laboratory, Fudan University, Shanghai 200433 (China)Search for more papers by this author First published: 05 September 2001 https://doi.org/10.1002/1521-4095(200109)13:18<1402::AID-ADMA1402>3.0.CO;2-UCitations: 9AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstract A novel method for preparing luminescent erbium-doped porous silicon(PSi) is presented. By anodic etching of an Er and O co-doped Si single crystalline film grown by molecular beam epitaxy, an Er-doped PSi/PSi bilayer structure is formed. The advantages of such a bilayer structure are efficient excitation of Er ions and suppression of energy back transfer for the de-excitation process. The Figure is an SEM image of a PSi:Er sample. References 1 S. Coffa, G. Franzo, F. Priolo, Mater. Res. Soc. Bull. 1998, 23 (4), 25. 2 U. Hommerich, F. Namavar, A. M. Cremins-Costa, K. L. Bray, Appl. Phys. Lett. 1996, 68, 1951. 3 T. Dejima, R. Saito, S. Yugo, H. Isshiki, T. Kimura, Appl. Phys. Lett. 1998, 84, 1036. 4 T. Kimura, A. Yokoi, H. Horiguchi, R. Saito, T. Ikoma, A. Sato, Appl. Phys. Lett. 1994, 65, 983. 5 F. Namavar, F. Lu, C. H. Perry, A. Cremins, N. M. Kalkhoran, R. A. Scoref, J. Appl. Phys. 1995, 77, 4813. 6 J. H. Shin, G. N. Van den Hoven, A. Polman, Appl. Phys. Lett. 1995, 66, 2379. 7 T. Taskin, S. Gardelis, J. H. Evans, B. Hamilton, A. R. Peaker, Electron. 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