Abstract:A proposed mechanism called "pseudo‐wet plasma etching" explains cryogenic etching process with hydrogen‐containing fluorocarbon plasmas. At cryogenic temperatures, the synergy demonstrates that the enhanced etch process is determined by the surface interactions between ions, surface‐adsorbed HF/H2O, and the material being etched, unlike conventional reactive ion etching conducted at high temperatures. Manufacturing semiconductor devices requires advanced patterning technologies, including reactive ion etching (RIE) based on the synergistic interactions between ions and etch gas. However, these interactions weaken as devices continuously scale down to sub‐nanoscale, primarily attributed to the diminished transport of radicals and ions into the small features. This leads to a significant decrease in etch rate (ER). Here, a novel synergistic interaction involving ions, surface‐adsorbed chemistries, and materials at cryogenic temperatures is found to exhibit a significant increase in the ER of SiO2 using CF4/H2 plasmas. The ER increases twofold when plasma with H2/(CF4 + H2) = 33% is used and the substrate temperature is lowered from 20 to −60 °C. The adsorption of HF and H2O on the SiO2 surface at cryogenic temperatures is confirmed using in situ Fourier transform infrared spectroscopy. The synergistic interactions of the surface‐adsorbed HF/H2O as etching catalysts and plasma species result in the ER enhancement. Therefore, a mechanism called "pseudo‐wet plasma etching" is proposed to explain the cryogenic etching process. This synergy demonstrates that the enhanced etch process is determined by the surface interactions between ions, surface‐adsorbed chemistry, and the material being etched, rather than interactions between ion and gas phase, as observed in the conventional RIE.

Silicon Wafer Etching by Transmitted Electron‐Beam‐Enhanced Plasma

Synchrotron-Radiation-Excited Etching Of Silicon Wafer Enhanced By Disk-Shaped Cf4 Plasma

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Fabrication of Electron-Beam Excited Plasma Process Reactor with a Polymer Interface

Sub-damage-threshold plasma etching and profile tailoring of Si through laser-stimulated thermal desorption

Low-damage etching of poly-Si and SiO 2 via a low-energy electron beam in inductively coupled CF 4 plasma

A study on the etching characteristics of atmospheric pressure plasma for single-crystal silicon wafer

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

Design and fabrication of microcantilever probe integrated with microplasma reactor for maskless scanning plasma etching

Study on the Key Parameters in Etching of Fused Silica Using Atmospheric Inductively Coupled Plasma

A New Microplasma Reactor for Scanning Plasma Etching

Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns

Defined Etching Of Carbon-Diamond Films On Silicon Using An Oxygen Plasma With Titanium Masking

Synchrotron-Radiation-Induced Deposition of Etch-Protecting Film on Si in Cf4 Plasma

Communication-Fluorinated Plasma Treatments Using Ptfe Substrates for Room-Temperature Silicon Wafer Direct Bonding

SF6 plasma etching and profile evolution of silicon in microplasma reactor

Pseudo‐Wet Plasma Mechanism Enabling High‐Throughput Dry Etching of SiO2 by Cryogenic‐Assisted Surface Reactions

Wafer level microarcing model in 90nm chemical-vapor deposition low-k via etch on 300mm silicon-on-insulator substrate

Fabrication and Performance of Microplasma Reactor for Maskless Scanning Plasma Etching

Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry