Abstract:Reactive ion beam etching of silicon is performed at low substrate temperature (153<T<300 K). The beam is extracted from a SF6 microwave plasma. The energy of the beam is 100 eV<E<400 eV, the ion current density is 0<J<5 mA cm−2. Energy distribution and composition of the beam have been studied using a mass spectrometer coupled with a cylindric mirror analyzer. The beam can be considered as monoenergetic with a full width at half-maximum about 8 eV. Using SF6 plasma, F+ is the predominant species, a significant proportion of SF+, SF2+, S+, and SF3+ ions is present in the beam. The active neutral flux of fluorine atoms coming from the ion source has been estimated between 6×1016 and 4×1017 cm−2 s−1. When no ion beam strikes the sample, the probability of reaction of neutral F atoms with Si is evaluated between 0.02 and 0.1 at 300 K. The decrease of the substrate temperature has revealed the role of the ion-induced reaction and the ion-stimulated desorption of SFx radicals in the etching process. At relative low power densities (100<E<400 eV and J=0.65 mA cm−2), an increase in the etch yield occurs as the temperature decreases until 220 K because there is an enhancement of the ion-induced reactions. If the energy of the beam is not high enough, the etching is reduced or even blocked by a thick layer of adsorbed molecules at T<220 K. At higher power densities (100<E<400 eV and 2 mA cm−2<J<5 mA cm−2) no significant etch yield enhancement is noted as the temperature decreases because the ion-stimulated desorption becomes predominant. In the case of high current density which corresponds to low values of the ratio of neutral flux over ion flux (a few ten), the etch yield approaches the value of the physical sputtering yield calculated by a model derived from the Sigmund cascade collision.

Low-damage etching of poly-Si and SiO 2 via a low-energy electron beam in inductively coupled CF 4 plasma

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Traceless Mitigation of Laser Damage Precursors on a Fused Silica Surface by Combining Reactive Ion Beam Etching with Dynamic Chemical Etching

Sub-damage-threshold plasma etching and profile tailoring of Si through laser-stimulated thermal desorption

Silicon Wafer Etching by Transmitted Electron‐Beam‐Enhanced Plasma

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

A study on the etching characteristics of atmospheric pressure plasma for single-crystal silicon wafer

Synchrotron-Radiation-Excited Etching Of Silicon Wafer Enhanced By Disk-Shaped Cf4 Plasma

Etching of Si at low temperatures using a SF6 reactive ion beam: Effect of the ion energy and current density

Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma

Pseudo‐Wet Plasma Mechanism Enabling High‐Throughput Dry Etching of SiO2 by Cryogenic‐Assisted Surface Reactions

Simulation of SiO<sub>2</sub> etching in an inductively coupled CF<sub>4</sub> plasma

Simulation of SiO2 etching in an inductively coupled CF4 plasma

Plasma Induced Damage Reduction of Ultra Low-k Dielectric by Using Source Pulsed Plasma Etching for Next BEOL Interconnect Manufacturing

In-plasma photo-assisted etching of Si with chlorine aided by an external vacuum ultraviolet source

Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Remote Plasma Enhanced Cyclic Etching of a Cyclosiloxane Polymer Thin Film

Reactive ion etching of SiC thin films using fluorinated gases