Abstract:Cryogenic deep reactive ion etching (Cryo DRIE) of silicon has become an enticing but challenging process utilized in front-end fabrication for the semiconductor industry. This method, compared to the Bosch process, yields vertical etch profiles with smoother sidewalls not subjected to scalloping, which are desired for many microelectromechanical systems (MEMS) applications. Smoother sidewalls enhance electrical contact by ensuring more conformal and uniform sidewall coverage, thereby increasing the effective contact area without altering contact dimensions. The versatility of the Cryo DRIE process allows for customization of the etch profiles by adjusting key process parameters such as table temperature, O2 percentage of the total gas flow rate (O2 + SF6), RF bias power, and process pressure. In this work, we undertake a comprehensive study of the effects of Cryo DRIE process parameters on the trench profiles in the structures used to define cantilevers in MEMS devices. Experiments were performed with an Oxford PlasmaPro 100 Estrelas ICP-RIE system using positive photoresist SPR-955 as a mask material. Our findings demonstrate significant influences on the sidewall angle, etch rate, and trench shape due to these parameter modifications. Varying the table temperature between -80°C and -120°C under a constant process pressure of 10 mTorr changes the etch rate from 3 to 4 μm/min, while sidewall angle changes by ~2°, from positive ( 90° relative to the Si surface) tapering. Altering the O2 flow rate with constant SF6 flow results in a notable 10° shift in sidewall tapering. Furthermore, SPR-955 photoresist masks provide selectivity of 46:1 with respect to Si and facilitates the fabrication of MEMS devices with precise dimension control ranging from 1 to 100 μm for etching depths up to 42 μm using Cryo DRIE. Understanding the influence of each parameter is crucial for optimizing MEMS device fabrication.

Ion Bombardment As Dominant Factor in Plasma Cryo-Etching for High Aspect Ratio Silicon Structures

Plasma Cyro-etching of High Aspect Ratio Silicon Crystal Structures

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma

ICP vs CCP in High Aspect Ratio Etching of SiO2 using Ar/C4F8/O2 Gas Mixtures

Pseudo‐Wet Plasma Mechanism Enabling High‐Throughput Dry Etching of SiO2 by Cryogenic‐Assisted Surface Reactions

Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Study of high aspect ratio etching in silicon by a mixture of SF6/O2 using a 2-D model based on a Monte Carlo approach.

Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

High Aspect Ratio Si Etching Technique and Application

Numerical study of aperture shape effects in deep cryogenic etching of silicon

Critical tasks in high aspect ratio silicon dry etching for microelectromechanical systems

Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications

Low-damage etching of poly-Si and SiO 2 via a low-energy electron beam in inductively coupled CF 4 plasma

Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns

Cryogenic DRIE Processes for High-Precision Silicon Etching in MEMS Applications

Microscale pattern etch of 4H–SiC by inductively coupled plasma

Reactive ion etching of SiC thin films using fluorinated gases

High Aspect Ratio Etching of Nanopores in PECVD SiC Through AAO Mask