Abstract:The etch profile control for the amorphous carbon layer (ACL) is an important step in the 3D NAND fabrication process. Because ACL is the mask material for defining the pattern of the high-aspect-ratio-contact (HARC) dielectric ONON layer etch process, precise control of its etch profile is necessary. Specifically, an ideal ACL mask profile should be free of symptoms such as hole circularity distortion, profile twisting, bowing, and undercutting. In order to achieve this desired etch performance, knowledge of various etch contributing factors must be systematically derived and applied, including etch surface chemistry, high-aspect-ratio (HAR) etchant transport, ion flux and ion energy angle distribution function (EADF) control, etc. In this work, we investigate the ACL etch fundamental characteristics through combined 2D chamber-scale plasma simulations with the hybrid plasma-equipment model (HPEM) and 3D etch profile simulations with the Monte-Carlo Feature Profile Model (MCFPM) for an inductively-coupled-plasma (ICP) reactor with RF bias at the substrate. In particular, we focus on the profile trends under different reactant fluxes and energies. Our findings indicate that maintaining a neutral-starved (ion-rich) etch regime is essential for mitigating both the channel hole etch circularity distortion and the slit etch profile twisting. To achieve this desired etch regime, the HAR ion, and neutral transport must controlled by the RF bias power and frequency, substrate temperature, etc. Furthermore, especially in this neutral-limited etch regime which is necessary for distortion and twisting mitigation, the control of the consequent aspect-ratio dependent etching (ARDE), as well as maintaining the critical dimension (CD) and reducing bowing and undercutting are also necessary. For this purpose, atomistic density functional theory (DFT) calculations have been applied to compare the reaction energetics for various ALD-like sidewall passivation chemistries. Specifically, we propose a new process based on its favorable reaction energetics. Experimental cross-section images have matched simulation results. In conclusion, our insights have provided guidance for process optimization and tool design to meet industrial demands.

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A comparative study of Cx(x = 4, 5, 7)F8 plasmas for dry etch processing

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

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Three-Dimensional Discharge Simulation of Inductively Coupled Plasma (icp) Etching Reactor

Study of Plug Etch back process matching on faraday shielded ICP and traditional CCP plasma ETCH chambers

Voltage waveform tailoring for high aspect ratio plasma etching of SiO2 using Ar/CF4/O2 mixtures: Consequences of ion and electron distributions on etch profiles

Mechanisms for plasma etching of RRAM SiO2 with diblock copolymer selectivity

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Simulation of SiO<sub>2</sub> etching in an inductively coupled CF<sub>4</sub> plasma

Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O2/Ar Plasma

High Aspect Ratio Etching of Nanopores in PECVD SiC Through AAO Mask

Experimental Study of SiO2 Sputter Etching Process in 13.56 MHz Rf-Biased Inductively Coupled Plasma

High aspect ratio SiO2/SiN (ON) stacked layer etching using C3HF5, C4H2F6, and C4H4F6

High-aspect-ratio amorphous carbon mask etch profile control through plasma and surface chemistry optimization

Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Comparison of glancing-angle scatterings on different materials in a high aspect ratio plasma etching process using molecular dynamics simulation

Vertical and Smooth, Etching of Inp by Cl-2/Ch4/Ar Inductively Coupled Plasma at Room Temperature