Abstract:Continued downscaling of semiconductor devices has placed stringent constraints on all aspects of the fabrication process including plasma-assisted anisotropic etching. To address manufacturing challenges associated with atomic-scale control, material selectivity, etch fidelity, and increasingly complex device architectures, reactive ion etching (RIE) is transitioning to plasma-assisted atomic layer etching (ALE). Even though the number of elements used in the semiconductor devices has increased several-fold over the last four decades, SiO2 and SiNx remain the most commonly used dielectric materials. In fact, fluorocarbon based, plasma-assisted ALE processes for SiO2 and SiNx have already been integrated into semiconductor manufacturing, including etching of self-aligned contacts for advanced transistors. However, several challenges remain in achieving ultrahigh etch selectivity of SiO2 over SiNx and vice versa. In this article, first, the authors provide a focused review on selective RIE of SiO2 over SiNx and contrast this with ALE. A particular focus is given to the etching mechanism, including the role of the mixing layer composition and thickness at the fluorocarbon-SiO2 interface, the F-to-C ratio in the fluorocarbon parent gas, H2 dilution, surface composition on the nonetched SiNx, ion flux and energy, Ar plasma activation duration in ALE, and chamber memory effects. Second, we discuss the reverse case of selectively etching SiNx over SiO2 with careful attention given to the role of novel hydrofluorocarbon gases and dilution of the primary feed gas with other gases such as CH4 and NO. In the second part of this review, we also discuss how novel surface chemistries are enabled by the introduction of ALE, which include selective (NH4)2SiF6 formation on the SiNx surface and selective surface prefunctionalization of SiO2 to enable ultrahigh selectivity. Through this review, the authors hope to provide the readers with an exhaustive knowledge of the selectivity mechanisms for RIE of SiO2 over SiNx and vice versa, which provides a basis for developing future highly material-selective ALE processes.

Mechanisms for plasma etching of RRAM SiO2 with diblock copolymer selectivity

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Reactive Ion Etching of Poly (cyclohexene Carbonate) in Oxygen Plasma

CHF 3 /O 2 -Based Plasma Reactive Ion Etching of GeTe for Nonvolatile Phase Change Memory

Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma

Study of Polyimide As Sacrificial Layer with O-2 Plasma Releasing for Its Application in Mems Capacitive Fpa Fabrication

ICP vs CCP in High Aspect Ratio Etching of SiO2 using Ar/C4F8/O2 Gas Mixtures

Plasma etch processing of advanced ferroelectric devices

Reactive ion etching of SiC thin films using fluorinated gases

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

Dry etching of polydimethylsiloxane used for bio-microfluidic systems

The investigation of DARC etch back in DRAM capacitor oxide mask opening

Challenges for plasma etch integration of ferroelectric capacitors in FeRAM's and DRAM's

Reactive ion Etching of SiO2 and Mo Sidewall Profile Process

Material Engineering Technique for Siox-Based Embedded Rram with Cmos Compatible Process

Etch selectivity during plasma-assisted etching of SiO2 and SiNx: Transitioning from reactive ion etching to atomic layer etching

The Study of Reactive Ion Etching of Heavily Doped Polysilicon Based on HBr/O2/He Plasmas for Thermopile Devices

Simulation of SiO<sub>2</sub> etching in an inductively coupled CF<sub>4</sub> plasma

Effect of SiCN thin film interlayer for ZnO-based RRAM

Highly Selective Etch of Silicon Dioxide with Tungsten Hard Mask Deposited by PVD Process

Experimental Study of SiO2 Sputter Etching Process in 13.56 MHz Rf-Biased Inductively Coupled Plasma