Abstract:The aim of the present paper is to review our work on plasma‐surface interactions during the etching of silicon gates in low pressure high density HBr/Cl2/O2 based plasmas. In integrated circuit manufacturing, the transfer of patterns onto the polysilicon layer relies on the formation of a passivation layer on sidewalls of the etched features, which protects the silicon gate sidewall fromisotropic etching. At the same time, a layer with an almost identical chemical composition is also deposited on the reactor walls and can modify the process parameters by changing the radicals' surface loss probability. In this work we use a new “plasma etching‐sputtering” diagnostic technique, involving a subsequent “mild etching” of the layer deposited on the chamber walls by a few % SF6‐containing Ar plasma. Thus we investigate the chemical composition of this layer. This chemical composition is deduced from the time variation of the gas phase concentration of different atoms and radicals, the etch products of the wall deposited layer, monitored during the “mild etching” of the layer by time‐resolved optical emission spectroscopy and mass spectrometry. Optical absorption spectroscopy and mass spectrometry have been employed to characterize the HBr/Cl2/O2 plasma, currently used for the gate etching, and to estimate the absolute flux of neutral and ionic deposition precursors reaching the reactor walls. It comes out that the silicon wafer etch byproducts, SiClx radicals (x < 2) and SiOyCl+x ions, are the main depositing agents. Finally, the chemical topography analysis method, based on the X‐ray photoelectron spectroscopy, has been used to determine the chemical composition of the layer formed on the sidewalls of the silicon etched features. We show that the layers deposited on the sidewalls and on the chamber walls are both silicon oxyhalogenides (SiOyClx) compounds, formed by the subsequent oxidation of the deposited silicon chloride etching by‐products. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Effects of Chamber Wall Conditions on Cl Concentration and Si Etch Rate Uniformity in Plasma Etching Reactors

Correlation and Interaction between Sidewall Passivation and Chamber Walls Deposition During Silicon Gate Etching

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Across wafer etch rate uniformity in a high density plasma reactor: Experiment and modeling

ON MECHANISMS OF OXYGEN INFLUENCE ON GAS-PHASE PARAMETERS AND SILICON REACTIVE-ION ETCHING KINETICS IN HBr + Cl2 + O2 PLASMA

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

Parametric modeling and measurement of silicon etching in a high density chlorine plasma

Study of the Nanometer Scale Polysilicon Micro Structure Etching

Effects of plasma conditions on the shapes of features etched in Cl2 and HBr plasmas. I. Bulk crystalline silicon etching

Surface chemistry and damage in the high density plasma etching of gallium arsenide

Process kit and wafer temperature effects on dielectric etch rate and uniformity of electrostatic chuck

Reactive ion etching of plasma enhanced chemical vapor deposition amorphous silicon and silicon nitride: Feeding gas effects

Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma

Molecular dynamics simulation of Si trench etching with SiO2 hard masks

Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing

Polysilicon gate etching in high density plasmas. V. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl2/O2 plasmas

Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma

Expression of the Si Etch Rate in a CF 4 Plasma with Four Internal Process Variables

Microstructural characterization and inductively coupled plasma-reactive ion etching resistance of Y2O3–Y4Al2O9 composite under CF4/Ar/O2 mixed gas conditions

Monte Carlo simulation and measurement of silicon reactive ion etching profiles

Pulse‐time‐modulated electron cyclotron resonance plasma etching with low radio‐frequency substrate bias