Chemical etching of GaSb-based materials

RuiJun Dong,Guojun Liu,Te Li,Mei Li,Zhanguo Li,Zhipeng Wei
2011-01-01
Abstract:As the mesa etching for a semiconductor laser affects the later fabrication process and the performance of the laser, this paper investigates the effects of mesa etching on GaSb materials based on the chemical etching by using hydrochloric acid and phosphoric acid systems separately. Then, better groups was chosen and their components were adjusted to obtain the regularity with the etching rate and determine the best etching solution with more suitable composition and ratio was determined. Using optical microscope, Scanning Electron Microscopy (SEM) and other monitoring devices to observe the topography and the etching rate of etching mesa under different conditions, it shows that the orthophosphoric acid system was better than hydrochloric acid one. After adjusting the concentrations of acetic acid in hydrochloric acid system and tartaric acid in orthophosphoric acid system, the relationship of the concentration and the etching rate was obtained. Finally, it suggests that the solution of H 3PO 4(1 mL): H 2O 2(1 mL): C 4H 6O 6(1 g): H 2O(10 mL) is more effective and suitable for the mesa etching of GaSb in a etching rate of 0.5 μm/min.
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