Abstract:The early work of John Coburn and Harold Winters revealed a synergistic effect in ion-enhanced Si etching by the concurrent irradiation of Ar+ and XeF2. This finding provided an important foundation for the development of plasma dry etching processes. The experimental results of Coburn and Winters also found effects that are useful for the development of atomic layer etching (ALE) processes characterized by a self-limited etch rate. ALE approaches are widely established and can be utilized in either directional or isotropic etching by employing proper surface modification and product removal steps. Nevertheless, the development of material selective ALE processes is still limited. An approach that combines substrate-selective deposition with etching opens a new processing window for selective ALE. The authors studied the deposition behavior of mixtures of methane (CH4) with trifluoromethane (CHF3) and mixtures of methane with octafluorocyclobutane (C4F8) on HfO2 and Si surfaces. The experimental results show that a CH4/C4F8 mixture produces a comparable fluorocarbon (FC) deposition thickness on both HfO2 and Si during the deposition step. In contrast, a CH4/CHF3 mixture deposits an FC film on Si, whereas it fluorinates the HfO2 surface with negligible FC deposition. Utilizing these behaviors allows for an ALE process based on CH4/CHF3 for selective removal of HfO2 over Si. Surface characterization data that provide mechanistic insights into these processes are also provided and discussed.

Selective etching of GaAs substrate

Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

Highly selective dry etching of GaP in the presence of Al$_\textrm{x}$Ga$_{1-\textrm{x}}$P

Highly Selective Dry Etching of Gan over Algan Using Inductively Coupled Cl-2/N-2/O-2 Plasmas

Selective etching of (111)B-oriented $Al_x Ga_{1-x} As$-layers for epitaxial lift-off

Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas

Highly Selective Chemical Etching of Si Vs. Si1 − X Ge X Using NH 4 OH Solution

Selective Wet Etching Characteristics of Lattice-Matched Ingaas/Inalas/Inp

Interface Engineering and Epitaxial Growth of Single‐Crystalline Aluminum Films on Semiconductors

Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate

Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern

Wet Etching in β-Ga2O3 Bulk Single Crystal

Nonselective and smooth etching of GaN/AlGaN heterostructures by inductively coupled plasmas

Wet etching in beta-Ga2O3 bulk single crystals

Nonselective etching of GaN/AlGaN heterostructures by Cl 2 /Ar/BCl 3 inductively coupled plasmas

Selective area epitaxy of GaAs films using patterned graphene on Ge

Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition

Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4 Plasma

A Systematic Study on Dry Etching Process of Germanium for Ge 3D-Fets Applications

Highly Selective Chemical Etching of Si vs. Si[sub 1−x]Ge[sub x] Using NH[sub 4]OH Solution