Abstract:The principal obstacle to III-V compound semiconductors rivaling or exceeding the properties of Si electronics has been the lack of high-quality, thermodynamically stable insulators on GaAs (or on III-V materials in general). For more than four decades, the research community has searched for suitable III-V compound semiconductor gate dielectrics or passivation layers. The literature testifies to the extent of this effort, with representative, currently active approaches including sulfur passivation , silicon interface control layers (Si ICLs) , in situ molecular beam epitaxy (MBE) growth of Ga2O3(Gd2O3) , ex situ atomic layer deposition (ALD) growth of Al2O3 and HfO2 , wet oxidation of InAlP , jet vapor deposition (JVD) 12 of Si3N4, and ALD or PVD of HfO2 + Si ICL . The research on ALD high-k dielectric is of particular interest, since the Si industry is getting familiar with ALD Hfbased dielectrics and this approach has the potential to become a manufacturable technology. In the past years, we systematically studied the interface properties of ALD high-k dielectrics on GaAs, InGaAs with different In concentrations, InAs, InSb, InP, GaN and GaP using quasi-static CV, low-frequency high-frequency CV, conductance-method, charge pumping, and flatband shift vs. metal workfunction etc. approaches. The results show the Fermi-level in GaAs is not absolutely pinned at the mid-gap as Spicer model proposes. It can move almost across the whole bandgap with ~70% modulation efficiency. However, due to the wide bandgap of GaAs, existing interface traps and low density of states in GaAs, only weak inversion could be realized at ALD Al2O3/GaAs interface. This fact explains the observed inversion feature in quasi-static CV measurement at room temperature and in dark. It also explains why only low drain currents are obtained in inversion GaAs NMOSFETs and PMOSFETs using ALD Al2O3 as high-k dielectrics. Fermi-level in In-rich InGaAs is totally unpinned and strong inversion is realized as well as large drain current in inversion NMOSFETs. We also review detailed C-V and conductance-method measurements on high temperature annealed ALD Al2O3 dielectrics on GaAs and InGaAs and I-V characterization on fabricated enhancement-mode (E-mode) GaAs and InGaAs MOSFETs where the inversion channels are directly formed at the Al2O3/GaAs and Al2O3/InGaAs interfaces.

Selective Wet Etching Characteristics of Lattice-Matched Ingaas/Inalas/Inp

Selective etching of GaAs substrate

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

Design of AlInAs/InP Tunnel Junction and Its Application in Devices

High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application

Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N

Highly selective dry etching of GaP in the presence of Al$_\textrm{x}$Ga$_{1-\textrm{x}}$P

Highly Selective Dry Etching of Gan over Algan Using Inductively Coupled Cl-2/N-2/O-2 Plasmas

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Nonselective and smooth etching of GaN/AlGaN heterostructures by inductively coupled plasmas

In Situ Thermal Atomic Layer Etching for Sub-5 nm InGaAs Multigate MOSFETs

Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD

High-performance Inversion-mode High-k/InGaAs MOSFETs and Their Interface Studies - Invited

Nonselective etching of GaN/AlGaN heterostructures by Cl 2 /Ar/BCl 3 inductively coupled plasmas

Mesa Etching of Typeii InAs/GaSb Superlattice

Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4 Plasma

Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas

Dry Etching Characteristics of Algan/Gan Heterostructures Using Inductively Coupled H-2/Cl-2, Ar/Cl-2 and Bcl3/Cl-2 Plasmas

High-Yield Enhancement-Mode GaN P-Fet with Etching-Target Layer and High-Selectivity Etching Techniques