Defect Analysis of MBE Reactor-Grown HgCdTe on Si, GaAs, GaSb, and CZT Substrates Through the TNL-Epigrow Simulator
P. K. Saxena,P. Srivastava,A. Srivastava
DOI: https://doi.org/10.1007/s11664-024-11082-0
IF: 2.1
2024-04-22
Journal of Electronic Materials
Abstract:This paper systematically reviews the progress on the HgCdTe (MCT) material deposition via molecular-beam epitaxy (MBE) and previously reported atomistic approaches used to model the MCT epitaxy. The structure design and fabrication of the infrared (IR) detection systems require highly crystalline MCT films. The state-of-the-art of the MBE growth processes of Hg1−xCdxTe films over Si, GaAs, GaSb, and CdZnTe substrates are reported here from an atomistic simulation perspective. The most advanced in-house-developed kinetic Monte Carlo (kMC) technique, coupled with the geometry of the MBE reactor (implemented in the TNL-EpiGrowTM simulator) is exploited to reproduce real-time MBE experiments. The ability to track each atom involved in the adsorption, diffusion, and desorption processes over the lattice provides deeper insights. The ability to map various defects quantitatively and qualitatively during the growth process in a layer-by-layer and island mode helps to provide a proper understanding of their formation. The TNL-EpiGrowTM simulator provides an innovative and cost-effective solution for the epitaxial growth processes associated with MBE, CVD, and MOCVD reactors for most semiconductors. The types of defects, their position over the lattice, layer-by-layer strain, surface roughness, lattice parameters are easily extractable and provide an unmatched solution. However, it is very difficult to realize similar solutions through sophisticated instruments. Si, GaAs, GaSb, and CdZnTe substrates have been used to reproduce the MBE process of Hg1−xCdxTe (x ≈ 0.55). The vacancies and dislocation densities are reported here to characterize the cases of MCT epitaxy on the four different substrates. The growth rates of CdTe and MCT have been benchmarked against the experimental data (Pacuski et al. in Cryst Growth Des 17(6):2987, 2017; Wijewamauriya et al. in Appl Phys Lett 51(24):2025, 1987). The output results revealed that CdZnTe is the most attractive substrate choice but, due to its technological challenges, GaSb can replace it and is the most suitable option for the growth of Hg1−xCdxTe as compared to Si and GaAs substrates under similar conditions. The results reported here also support the experimental findings (Gu et al. in J Cryst Growth 468:216, 2017). The dislocations and vacancies generated in the GaSb substrate are comparable to those in the CdZnTe substrate.
engineering, electrical & electronic,materials science, multidisciplinary,physics, applied