Abstract:Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can be explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

Defects in Cd3As2 Epilayers Via Molecular Beam Epitaxy and Strategies for Reducing Them

Atomic Defects in Two‐Dimensional Materials: from Single‐Atom Spectroscopy to Functionalities in Opto‐/Electronics, Nanomagnetism, and Catalysis

Elucidating Twinning Mechanisms in CdTe Homoepitaxial Film Growth from Machine Learning Force Field Molecular Dynamics Simulations

Preface of 16th International Conference on Defects, Recognition, Imaging and Physics in Semiconductors

Defect emission and its dipole orientation in layered ternary Znln2S4 semiconductor

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin-Orbit Splitting, and Strain.

Determination of structural defects in Hg1-xCdxTe multilayer materials

Defect repairing in two-dimensional transition metal dichalcogenides

Dislocations in InAs Epilayers Grown by MBE on GaAs Substrates under Various Conditions

Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control

Bismuth Mediated Defect Engineering of Epitaxial Graphene on SiC(0001)

Defect Role in the Carrier Tunable Topological Insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Thin Films

In Situ Monitoring of Resistivity and Carrier Concentration During Molecular Beam Epitaxy of Topological Insulator Bi2Se3

Defect formation dynamics during CdTe overlayer growth

Scalable Growth of High Mobility Dirac Semimetal Cd3As2 Microbelts

X-ray diffraction topography and etched surface morphology of CdZnTe single crystals

Thickness-dependent electronic transport induced by in situ transformation of point defects in MBE-grown Bi 2 Te 3 thin films

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Intrinsic defect engineering of CVD grown monolayer MoS$_2$ for tuneable functional nanodevices