Abstract:The topologically protected surface states of three-dimensional (3D) topological insulators have the potential to be transformative for high-performance logic and memory devices by exploiting their specific properties such as spin-polarized current transport and defect tolerance due to suppressed backscattering. However, topological insulator based devices have been underwhelming to date primarily due to the presence of parasitic issues. An important example is the challenge of suppressing bulk conduction in Bi2Se3 and achieving Fermi levels ( EF) that reside in between the bulk valence and conduction bands so that the topologically protected surface states dominate the transport. The overwhelming majority of the Bi2Se3 studies in the literature report strongly n-type materials with EF in the bulk conduction band due to the presence of a high concentration of selenium vacancies. In contrast, here we report the growth of near-intrinsic Bi2Se3 with a minimal Se vacancy concentration providing a Fermi level near midgap with no extrinsic counter-doping required. We also demonstrate the crucial ability to tune EF from below midgap into the upper half of the gap near the conduction band edge by controlling the Se vacancy concentration using post-growth anneals. Additionally, we demonstrate the ability to maintain this Fermi level control following the careful, low-temperature removal of a protective Se cap, which allows samples to be transported in air for device fabrication. Thus, we provide detailed guidance for EF control that will finally enable researchers to fabricate high-performance devices that take advantage of transport through the topologically protected surface states of Bi2Se3.

In Situ Monitoring of Resistivity and Carrier Concentration During Molecular Beam Epitaxy of Topological Insulator Bi2Se3

Thickness and Growth-Condition Dependence of In-Situ Mobility and Carrier Density of Epitaxial Thin-Film Bi_2Se_3

Intrinsic Ultrathin Topological Insulators Grown via MBE Characterized by in-situ Angle Resolved Photoemission Spectroscopy

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Molecular beam epitaxial growth of topological insulators.

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

Ambipolar surface state transport in non-metallic stoichiometric Bi$_2$Se$_3$ crystals

Molecular Beam Epitaxy of Twin-Free Bi2Se3 and Sb2Te3 on In2Se3/InP(111)B Virtual Substrates

Doping Effects Of Sb And Pb In Epitaxial Topological Insulator Bi2se3 Thin Films: An In Situ Angle-Resolved Photoemission Spectroscopy Study

Scanning Tunneling Microscopy of Gate Tunable Topological Insulator Bi2Se3 Thin Films

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Growth of Ultrathin Bi$_2$Se$_3$ Films by Molecular Beam Epitaxy

Ambipolar field effect in Sb-doped Bi2Se3 nanoplates by solvothermal synthesis.

Molecular Beam Epitaxy of Bilayer Bi(111) Films on Topological Insulator Bi2te3: A Scanning Tunneling Microscopy Study

Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3

Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3

Nanoimaging of Electronic Heterogeneity in Bi2Se3 and Sb2Te3 Nanocrystals

Atomistic Control in Molecular Beam Epitaxy Growth of Intrinsic Magnetic Topological Insulator MnBi2Te4

Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy

Growth and structural characterisation of Sr-doped Bi2Se3 thin films