Abstract:Alloys of ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$ and ${\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}\phantom{\rule{4pt}{0ex}}[{({\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x})}_{2}{\mathrm{Te}}_{3}]$ have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Despite intensive transport and angle resolved photoemission (ARPES) studies, important questions about this system remain unanswered. For example, previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb:Bi composition ratio, but the optimum ratio varies widely across various studies. Moreover, it is unclear how the quasiparticle lifetime is affected by the disorder resulting from Sb/Bi alloying. In this work, we use scanning tunneling microscopy and spectroscopy to study the electronic structure of epitaxially grown (Bi,${\mathrm{Sb})}_{2}{\mathrm{Te}}_{3}$ thin films at the nanoscale. We study Landau levels (LLs) to determine the effect of disorder on the quasiparticle lifetime as well as the position of the Dirac point with respect to the Fermi energy. A plot of the LL peak widths shows that despite the intrinsic disorder, the quasiparticle lifetime is not significantly degraded. We further determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is $x\ensuremath{\sim}0.7$, but that postannealing temperatures can have a significant effect on the crystallinity and Fermi level position. Specifically, high postgrowth annealing temperature can result in better crystallinity and surface roughness, but also produces a larger Te defect density which adds $n$-type carriers. Finally, in combination with quasiparticle interference imaging, the dispersion is revealed over a large energy range above the Fermi energy, in a regime inaccessible to ARPES. Interestingly, the surface state dispersion for the $x\ensuremath{\sim}0.7$ sample shows great similarity to pristine ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$. This work provides microscopic information on the role of disorder and composition in determining carrier concentration, surface state dispersion, and quasiparticle lifetime in (${\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x}$)${}_{2}{\mathrm{Te}}_{3}$.

Thickness-dependent electronic transport induced by in situ transformation of point defects in MBE-grown Bi 2 Te 3 thin films

Evolution of atomic structure and electronic transport properties in n-type Bi 2 Te 3 films via Bi 2 planar defects

Identifying the Manipulation of Individual Atomic-Scale Defects for Boosting Thermoelectric Performances in Artificially Controlled Bi 2 Te 3 Films

Native Atomic Defects Manipulation for Enhancing the Electronic Transport Properties of Epitaxial SnTe Films

Role of Defects in the Carrier-Tunable Topological-Insulator (bi[subscript 1 − X]sb[subscript X])[subscript 2]te[subscript 3] Thin Films

Defect Role in the Carrier Tunable Topological Insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Thin Films

Observation of Thermal-Misfit Strain Relaxation in A Pbte Semiconductor Grown on Cd0.96zn0.04te(111)

Role of Defects in the Carrier-Tunable Topological-Insulator (Bi1-Xsbx)(2)te-3 Thin Films

Multilayered Structure and Enhanced Thermoelectric Properties of Bi1.5sb0.5te3 Film with Preferential Growth

Effect of Doping with Substituent Bi Atoms on the Electrical Transport Properties of a Bi 0.4 Sb 1.6 Te 3 Film Fabricated by Molecular Beam Epitaxy

Topological Insulator Thin Films Of Bi2te3 With Controlled Electronic Structure

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Intrinsic and extrinsic dopings in epitaxial films MnBi<sub>2</sub>Te<sub>4</sub>

Transport Properties Related to Two-Dimensional Surface States in Gate-Tunable Bi0.1Pb0.9Te Thin Films

Preferential Growth of Bi2Te3 Films with a Nanolayer Structure: Enhancement of Thermoelectric Properties Induced by Nanocrystal Boundaries

Tailoring Kinetics on A Topological Insulator Surface by Defect-Induced Strain: Pb Mobility on Bi2te3

Enhanced electrical and mechanical properties of Bi2Te3-based thermoelectric thick films enabled by a practical dynamic regulation strategy

Investigating and Manipulating the Molecular Beam Epitaxy Growth Kinetics of Intrinsic Magnetic Topological Insulator MnBi2Te4 with in Situ Angle-Resolved Photoemission Spectroscopy

Avoiding Oxygen Induced Pb Vacancies for High Thermoelectric Performance of N-Type Bi-doped Pb1-xBixTe Compounds

Modulation of Vacancy Defects and Texture for High Performance N-Type Bi2 Te3 Via High Energy Refinement.

Effects of Post-Annealing on Crystalline and Transport Properties of Bi2Te3 Thin Films*