Native Atomic Defects Manipulation for Enhancing the Electronic Transport Properties of Epitaxial SnTe Films

Fuqiang Hua,Pengfei Lv,Min Hong,Sen Xie,Min Zhang,Cheng Zhang,Wei Wang,Zhaohui Wang,Yong Liu,Yonggao Yan,Shengjun Yuan,Wei Liu,Xinfeng Tang

DOI: https://doi.org/10.1021/acsami.1c15447

2021-11-17

Abstract:P-type SnTe-based compounds have attracted extensive attention because of their high thermoelectric performance. Previous studies have made tremendous efforts to investigate native atomic defects in SnTe-based compounds, but there has been no direct experimental evidence so far. On the basis of MBE, STM, ARPES, DFT calculations, and transport measurements, this work directly visualizes the dominant native atomic defects and clarifies an alternative optimization mechanism of electronic transport properties via defect engineering in epitaxially grown SnTe (111) films. Our findings prove that positively charged Sn vacancies (V_Sn) and negatively charged Sn interstitials (Sn_i) are the leading native atomic defects that dominate electronic transport in SnTe, in contrast to previous studies that only considered V_Sn. Increasing the substrate temperature (<i>T</i>_sub) and decreasing the Te/Sn flux ratio during film growth reduces the density of V_Sn while increasing the density of Sn_i. A high <i>T</i>_sub results in a low hole density and high carrier mobility in SnTe films. The SnTe film grown at <i>T</i>_sub = 593 K and Te/Sn = 2/1 achieves its highest power factor of 1.73 mW m^-1 K^-2 at 673 K, which is attributed to the optimized hole density of 2.27 × 10²⁰ cm^-3 and the increased carrier mobility of 85.6 cm² V^-1 s^-1. Our experimental studies on the manipulation of native atomic defects can contribute to an increased understanding of the electronic transport properties of SnTe-based compounds.

materials science, multidisciplinary,nanoscience & nanotechnology