Abstract:Due to the intrinsically plentiful Sn vacancies, developing n-type SnTe thermoelectric materials is a big challenge. Herein, n-type SnTe thermoelectric materials with remarkable performance were successfully synthesized through suppressing Sn vacancies, followed by electron-doping. Pb alloying notably depressed the Sn vacancies via populating Sn vacancies in SnTe (supported by transmission electron microscopy), and the electrical transports were shifted from p-type to n-type through introducing electrons using I doping. In the n-type SnTe, we found that the electrical conductivity could be enhanced by increased carrier mobility through sharpening conduction bands after alloying Pb, while the lattice thermal conductivity could be reduced via strong phonon scattering after introducing defects by Pb alloying and I doping. Resulting from these enhancements, the n-type Sn0.6Pb0.4Te0.98I0.02 achieves a notably high ZTmax ∼ 0.8 at 573 K and a remarkable ZTave ∼ 0.51 at 300–823 K, which can match many excellent p-type SnTe. This work indicates that n-type SnTe could be experimentally acquired and is a promising candidate for thermoelectric generation, which will stimulate further research on n-type SnTe thermoelectric materials and even devices on the basis of both n- and p-type SnTe legs.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/jacs.1c02346?goto=supporting-info">https://pubs.acs.org/doi/10.1021/jacs.1c02346</a>.Details of experiments with calculations, S versus content of Pb and I (573 K), powder XRD patterns with lattice parameters for Sn1–xPbxTe0.98I0.02 (x = 0.2–0.45) and Sn0.6Pb0.4Te1–yIy (y = 0–0.025), thermoelectric transport properties versus temperature for Sn1–xPbxTe1–yIy (x = 0.2–0.45, y = 0–0.025), experimental and theoretical sample density of all samples, sound velocity, elastic properties, phonon mean free path, and Grüneisen parameter of samples included in the study (<a class="ext-link" href="/doi/suppl/10.1021/jacs.1c02346/suppl_file/ja1c02346_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Vacancy Manipulation Induced Optimal Carrier Concentration, Band Convergence and Low Lattice Thermal Conductivity in Nano‐Crystalline SnTe Yielding Superior Thermoelectric Performance

Enhancing Thermoelectric Performance of SnTe Via Stepwisely Optimizing Electrical and Thermal Transport Properties

Efficient Reduction of Carrier Concentration in SnTe: The Case of Gd Doping

Balancing electron and phonon scatterings while tailoring carrier concentration in SnTe for enhancing thermoelectric performance

Thermoelectric SnTe with Band Convergence, Dense Dislocations, and Interstitials Through Sn Self-Compensation and Mn Alloying.

Realizing high doping efficiency and thermoelectric performance in n-type SnSe polycrystals via bandgap engineering and vacancy compensation

Super-structured defects modulation for synergistically optimizing thermoelectric property in SnTe-based materials

Enhanced Band Convergence and Ultra-Low Thermal Conductivity Lead to High Thermoelectric Performance in SnTe

Achieving Enhanced Thermoelectric Performance in (SnTe) 1- x (Sb 2 Te 3 ) x and (SnTe) 1- y (Sb 2 Se 3 ) y Synthesized via Solvothermal Reaction and Sintering

Band convergence and nanostructure modulations lead to high thermoelectric performance in SnPb0.04Te-y% AgSbTe2

Synergistic Boost of Output Power Density and Efficiency in In-Li–codoped SnTe

Vacancy Suppression Induced Synergetic Optimization of Thermoelectric Performance in Sb-Doped GeTe Evidenced by Positron Annihilation Spectroscopy

Substantial thermoelectric enhancement achieved by manipulating the band structure and dislocations in Ag and La co-doped SnTe

Manipulation of Band Structure and Interstitial Defects for Improving Thermoelectric SnTe

Optimized Electronic Bands and Ultralow Lattice Thermal Conductivity in Ag and Y Codoped SnTe

Interstitial Defects Facilitate Dense Dislocations and Band Convergence for High Thermoelectric Performance in SnTe

Improvement in thermoelectric properties of Zn-Mn co-doped nanostructured SnTe through band engineering and chemical bond softening

Fine electron and phonon transports manipulation by Mn compensation for high thermoelectric performance of Sb2Te3(SnTe)n materials

Optimizing the thermoelectric performance of In-Cd codoped SnTe by introducing Sn vacancies

Achieving Enhanced Thermoelectric Performance In (Snte)(1-X)(Sb2te3)(X) And (Snte)(1-Y)(Sb2se3)(Y) Synthesized Via Solvothermal Reaction And Sintering

Realizing N-type SnTe Thermoelectrics with Competitive Performance through Suppressing Sn Vacancies