Abstract:The positron annihilation measurements reveal that high electrical conductivity of pristine SnTe results from a great deal of Sn vacancies that provide hole carriers. Gd doping can make a significant difference in regulation of Sn vacancies. As a result, superior TE performance of SnTe‐based materials is achieved through synergetic optimization of electrical and thermal transport properties. Synergetic optimization of electrical and thermal transport properties is achieved for SnTe‐based nano‐crystalline materials. Gd doping is able to suppress the Sn vacancy, which is confirmed by positron annihilation measurements and corresponding theoretical calculations. Hence, the optimal hole carrier concentration is obtained, leading to the improvement of electrical transport performance and simultaneous decrease of electronic thermal conductivity. In addition, the incremental density of states effective mass m* in SnTe is realized by the promotion of the band convergence via Gd doping, which is further confirmed by the band structure calculation. Hence, the enhancement of the Seebeck coefficient is also achieved, leading to a high power factor of 2922 μW m−1 K−2 for Sn0.96Gd0.04Te at 900 K. Meanwhile, substantial suppression of the lattice thermal conductivity is observed in Gd‐doped SnTe, which is originated from enhanced phonon scattering by multiple processes including mass and strain fluctuations due to the Gd doping, scattering of grain boundaries, nano‐pores, and secondary phases induced by Gd doping. With the decreased phonon mean free path and reduced average phonon group velocity, a rather low lattice thermal conductivity is achieved. As a result, the synergetic optimization of the electric and thermal transport properties contributes to a rather high ZT value of ≈1.5 at 900 K, leading to the superior thermoelectric performance of SnTe‐based nanoscale polycrystalline materials.

Improvement in thermoelectric properties of Bi-Mg co-doped SnTe via band engineering and nanostructuring

Improvement in thermoelectric properties of Zn-Mn co-doped nanostructured SnTe through band engineering and chemical bond softening

Cooperative regulation of electrical and thermal transport behavior enhancing the thermoelectric performance of SnTe

Enhanced Band Convergence and Ultra-Low Thermal Conductivity Lead to High Thermoelectric Performance in SnTe

Effect of Sn Doping in (bi0.25sb0.75)2−x Sn X Te3 (0 ≤ X ≤ 0.1) on Thermoelectric Performance

Constructing Coated Grain Nanocomposites and Intracrystalline Precipitates to Simultaneously Improve the Thermoelectric and Mechanical Properties of SnTe by MgB2 and Sb Co‐Doping

Balancing electron and phonon scatterings while tailoring carrier concentration in SnTe for enhancing thermoelectric performance

Enhanced Thermoelectric Performance of Stibium and Bismuth Co-Doped SnTe Via Melt Spinning

Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe

Synergistic Effect of Bismuth and Indium Codoping for High Thermoelectric Performance of Melt Spinning SnTe Alloys

Approaching the Minimum Lattice Thermal Conductivity of P-Type SnTe Thermoelectric Materials by Sb and Mg Alloying.

Substantial thermoelectric enhancement achieved by manipulating the band structure and dislocations in Ag and La co-doped SnTe

Thermoelectric Properties of In-Hg Co-Doping in SnTe: Energy Band Engineering

Enhanced Thermoelectric Properties in the Counter-Doped SnTe System with Strained Endotaxial SrTe

First-principles Calculations to Investigate Probing the Influence of Mn and Mg Doping Concentration on Electronic Structures and Transport Properties of SnTe Alloys

Vacancy Manipulation Induced Optimal Carrier Concentration, Band Convergence and Low Lattice Thermal Conductivity in Nano‐Crystalline SnTe Yielding Superior Thermoelectric Performance

Effects of Bi and Sb Doping on the Thermoelectric Performance of N-Type Quaternary Mg2.18Ge0.1Si0.3Sn0.6 Materials

Outstanding thermoelectric properties of solvothermal-synthesized Sn<sub>1-3<i>x</i></sub>In<sub><i>x</i></sub>Ag<sub>2<i>x</i></sub>Te micro-crystals through defect engineering and band tuning

Improving Thermoelectric Performance of AgSbTe2 through Suppression of Ag2Te and Band Convergence via Mg and Ti Codoping

Enhanced thermoelectric properties of Mg2Si 0.58Sn0.42 compounds by Bi doping

Enhanced thermoelectric performance at elevated temperature via suppression of intrinsic excitation in p-type Bi0.5−xSnxSb1.5Te3 thermoelectric material