Enhanced thermoelectric performance at elevated temperature via suppression of intrinsic excitation in p-type Bi0.5−xSnxSb1.5Te3 thermoelectric material

Sahiba Bano,D. K. Misra,Purnima Bharti,Ashish Kumar,Bal Govind,Aman Bhardwaj
DOI: https://doi.org/10.1007/s10854-022-07781-1
2022-02-01
Abstract:Bi2Te3-based thermoelectric materials are proven to be the potential candidate for low temperature commercial applications due to their high thermoelectric conversion efficiency. However, these materials can also be used for elevated temperature application via employing proper dopants with an optimum level of doping. Herein, Sn+2 at Bi+3 site in p-type Bi0.5−xSnxSb1.5Te3 (x = 0, 0.002, 0.005 and 0.010) are doped to optimize high ZT at elevated temperature for the application in power generation. The XRD, SEM and TEM investigations clearly reveal the formation of a single phase of polycrystalline Bi0.5Sb1.5Te3 in all the samples having stoichiometric composition Bi0.5−xSnxSb1.5Te3 (x = 0, 0.002, 0.005 and 0.010). Interestingly, the thermoelectric measurement and Hall measurement result in the suppression of the bipolar effect which ultimately drives to reach the system with maximum ZT ~ 1.27 at 373 K. The enhanced power factor (3.14 × 10–3 W/m K2 at 373 K) combined with the reduction in lattice thermal conductivity (κL ~ 0.61 W/m K at 373 K) results in a peak ZT value ~ 1.27 at 373 K for a stoichiometric composition Bi0.495Sn0.005Sb1.5Te3. This enhancement in ZT is about 38% larger than ZT of commercial composition Bi0.5Sb1.5Te3 (ZT ~ 0.92 at 373 K). The calculated theoretical TE conversion device efficiency η of Bi0.495Sn0.005Sb1.5Te3 was obtained to be η ~ 6.52% for ΔT ~ 123 K and found to be larger than that of the efficiency of matrix.
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