Abstract:Improving the mechanical strength of Czochralski (CZ) silicon is of significance for increasing the manufacturing yield of integrated circuits. In this work, we have comparatively investigated the dislocation gliding behaviors in the conventional CZ silicon, nitrogen (N)-doped CZ silicon, germanium (Ge)-doped CZ silicon as well as Ge and N co-doped CZ silicon subjected to the indentations for 30 min at different temperatures in the range of 850–1050 °C with an interval of 50 °C. It is found that the suppressing effect of N-doping on the dislocation gliding is strongest at 950 °C and becomes slightly weakened at higher temperatures, while Ge-doping does not exert a remarkable suppressing effect on the dislocation gliding until the temperature exceeds 950 °C. The co-doping of N and Ge impurities takes both advantages of N- and Ge-doping to suppress the dislocation gliding in CZ silicon at the aforementioned temperatures. More importantly, at 1000 and 1050 °C that are the typical processing temperatures for integrated circuits, the N and Ge co-doping exhibits a stronger suppressing effect on the dislocation gliding in CZ silicon than the single Ge- or N-doping. This indicates that the mechanical strength of CZ silicon in terms of the resistance of dislocation gliding at a high temperature can be further improved by co-doping Ge and N impurities. It is believed that the N-doping can result in the formation of larger grown-in oxygen precipitates and N–O complex-related pinning agents within the dislocations to suppress the dislocation gliding at 850–1050 °C with the strongest suppressing effect at 950 °C, while the suppressing effect of Ge-doping on the dislocation gliding at the temperatures exceeding 950 °C is tentatively ascribed to the formation of Ge–O complexes near the front of the dislocation lines.

Reduction of Threading Edge Dislocation Density in N-Type Gan by Si Delta-Doping

Influence of Mn-doping on Densities of Screw- and Edge-Type Threading Dislocations in Ga1−xMnxN Grown by Metal Organic Chemical Vapor Deposition

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates

Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

Effect of nitrogen doping on the dislocation behaviors of 4H-SiC

Low Threading Dislocation Density in GaN Films Grown on Patterned Sapphire Substrates

Study of Dislocation Densities of Thick GaN Films

Reduction Mechanisms for Dislocation Densities in GaN Heteroepitaxy over Si Substrate Patterned with a Serpentine Channel Structure

Nitrogen-Dependent Electronic Properties of Threading Edge Dislocations in 4H-SiC

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

Improvement of Properties of P-Gan by Mg Delta Doping

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer

Effects of Co-Doping Nitrogen and Germanium on Dislocation Gliding in Czochralski Silicon: Implication for Improving Mechanical Strength

Numerical Analysis of the Dislocation Density in N-Type 4H-Sic

Doping-dependent Nucleation of Basal Plane Dislocations in 4H-Sic

Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Effect of Dislocations on Electrical and Optical Properties of N-Type Al0.34Ga0.66N

Morphology Of Threading Dislocations In High-Resistivity Gan Films Observed By Transmission Electron Microscopy