Numerical Analysis of the Dislocation Density in N-Type 4H-Sic

Sheng'ou Lu,Hongyu Chen,Wei Hang,Rong Wang,Julong Yuan,Xiaodong Pi,Deren Yang,Xuefeng Han

DOI: https://doi.org/10.1039/d3ce00219e

IF: 3.756

2023-01-01

CrystEngComm

Abstract:Effective stress! By comparing the calculation and experimental results, a possible value of effective stress to evaluate the effect of nitrogen dopant on dislocation density is proposed.

What problem does this paper attempt to address?

Effect of nitrogen doping on the dislocation behaviors of 4H-SiC

Rong Wang,Xiaoshuang Liu,Jiajun Li,Hao Luo,Guang Yang,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1109/EDTM53872.2022.9798310

2022-01-01

Abstract:We demonstrate that nitrogen (N) dopants are prone to spontaneously decorate the most important dislocation of basal plane dislocation (BPD) during the N doping of 4H silicon carbide (4H-SiC). The N decoration shifts the acceptor-like states of BPDs to donor-like states, which results in the donor-like character of BPDs in N-doped 4H-SiC. Kinetically, N decoration enhances the slip and piling up of BPDs, reducing the hardness, elastic modulus and fracture toughness of 4H-SiC.
Doping-dependent Nucleation of Basal Plane Dislocations in 4H-Sic

Xiaoshuang Liu,Rong Wang,Junran Zhang,Yunhao Lu,Yiqiang Zhang,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1088/1361-6463/ac7178

2022-01-01

Abstract:Basal plane dislocations (BPDs) are one of the most harmful dislocations in 4H silicon carbide (4H-SiC). Understanding the nucleation of BPDs is the basis of reducing the density of BPDs in 4H-SiC. In this work, we investigate the nucleation mechanism of BPDs, as well as the effect of doping on the nucleation of BPDs in 4H-SiC using nanoindentation. It is found that the shear stress plays a dominant role in the nucleation of BPDs in undoped 4H-SiC. This indicates that the shear component of the thermal stress during the growth of 4H-SiC single crystals and that of the mechanical stress during the processing of 4H-SiC wafers both give rise to the nucleation of BPDs. Nitrogen (N) doping is found to facilitate the nucleation of BPDs and decrease the shear stress required for the nucleation of BPDs. In contrast, vanadium (V) doping hinders the nucleation of BPDs, which promotes the polymorph transition from 4H-SiC to 3C-SiC.
Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Sheng' ou Lu,Binjie Xu,Hongyu Chen,Wei Hang,Rong Wang,Julong Yuan,Xiaodong Pi,Deren Yang,Xuefeng Han

DOI: https://doi.org/10.1016/j.jcrysgro.2023.127526

IF: 1.8

2024-01-01

Journal of Crystal Growth

Abstract:Physical vapor transport (PVT) is the dominant method for growing 200 mm SiC crystals, and the crystals produced by this method still have dislocations, which affect the performance of the device. In this study, the finite element analysis of 200 mm SiC crystal growth has been conducted to investigate the influencing parameters on the dislocation density. The calculations are based on the model of multiple resistance heating. The transient heat transfer for the crystal growth is first calculated. A dynamic mesh technique is then employed to consider the shape evolution of the crystal during the growth. Finally, the distributions of the internal stress and dislocation density have been calculated based on the Alexander-Haasen model. The comparison among different parameters provides guidance for reducing the thermal stress and dislocation density in the 200 mm SiC crystal growth.
Calculation of Dislocation Destiny Using X-Ray Diffraction for 4H-Sic Homoepitaxial Layers

Jia Ren-xu,Zhang Yu-ming,Zhang Yi-men,Guo Hui

DOI: https://doi.org/10.3964/j.issn.1000-0593(2010)07-1995-03

2010-01-01

Spectroscopy and spectral analysis

Abstract:A theoretical and experimental study on calculating dislocation destiny for 4H-SiC homoepitaxial layers has been carried out. There is some difficulty in measuring dislocation density if it is more than 10(6) * cm(-2). In the paper, a theoretical analysis is made about the effects of dislocation density on the results of X-ray diffraction, and the relationship of dislocation density and FWHM spread is obtained. Then the X-ray diffraction curves of 4H-SiC in omego2theta with two different crystal faces are presented from which the density of dislocation is calculated. According to the result, the cause of dislocation origin is analyzed and the methods of decreasing dislocation density are proposed.
Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Yafei Kong,Xinyu Xie,Rong Wang,Xiaodong Pi,Deren Yang,Lingmao Xu

DOI: https://doi.org/10.1016/j.mssp.2024.108787

IF: 4.1

2024-01-01

Materials Science in Semiconductor Processing

Abstract:This work proposes an effective etching method for highly doped n-type 4H-SiC by combining electrochemical reactions and molten alkali etching. By employing our developed method, threading mixed dislocation (TMDs) and threading screw dislocations (TSDs) can be distinctly visualized as hexagonal etching pits of varying sizes. The slightly smaller threading edge dislocations (TEDs) appear as roughly circular etching pits, while basal plane dislocations (BPDs) are revealed as characteristic seashell-shaped pits. Additionally, we provide a reaction equation that elucidates the mechanism of the electrochemical etching process, thus sparking a new investigation into the discrimination of dislocations under molten alkali conditions. By applying a positive voltage to the wafer, we ensure a continuous supply of holes crucial for the reaction, thereby maintaining both the etching rate and the selectivity towards defects. This approach not only enhances the efficiency of the etching process but also provides a more accurate and reliable method for characterizing and understanding the dislocation properties of highly doped n-type 4H-SiC wafers.
Distribution of the Electrical Resistivity of a N-Type 4H-Sic Crystal

Xinyu Xie,Yafei Kong,Lingmao Xu,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1016/j.jcrysgro.2024.127892

IF: 1.8

2024-01-01

Journal of Crystal Growth

Abstract:Nitrogen is commonly doped to obtain n-type 4H-SiC crystals, which have been commercialized for the development of power electronics in recent years. Now the uniformity of electrical resistivity becomes an important issue for the growth of n-type 4H-SiC crystals. In this work, the effects of the radial thermal gradient and growth facet on the distribution of the electrical resistivity were investigated for a n-type 4H-SiC crystal with a diameter of 150 mm during its physical-vapor-transport growth. It is found that the resistivity at the center of the crystal is low in the early growth stage. As the crystal grows, the growth facet expands, accompanied by a reduction in the resistivity of this facet. The change in the distribution of the resistivity in the crystal is initially governed by the radial thermal gradient and then influenced by the spiral growth mode of the growth facet. In the non-facet region of the crystal step-flow growth occurs, where the doping of nitrogen is primarily affected by the temperature and C/Si ratio. In the facet region, the volume fraction of nitrogen in the mixture of argon and nitrogen input into the growth system mainly governs the doping of nitrogen during the spiral growth. The insights gained in the current work may help the fabrication of n-type 4H-SiC crystals with uniform resistivity.
Residual Stresses and Stacking Faults in N-Type 4H-Sic Epilayers

RS Okojie,M Zhang,P Pirouz

DOI: https://doi.org/10.4028/www.scientific.net/msf.457-460.529

2004-01-01

Materials Science Forum

Abstract:Residual stresses were measured in n-type 4H-SiC epilayers having nitrogen-doping levels of 5 x 10(17), 5 x 10(18), and 2 x 10(19) cm(-3) and grown homoepitaxially on n-type 4H-SiC substrates having doping levels between 1.82 and 2.10 x 10(19) cm(-3) (rho = 0.010-0.01 Omega-cm). Radius of curvature measurement of the epilayer/substrate bicrystals indicates the existence of compressive stresses of magnitudes between 250 and 400 Mpa. Transmission electron microscopy (TEM) examination of the epilayer/substrate bicrystals, after they were annealed at 1150degreesC in nitrogen for thirty minutes, revealed bands of stacking faults (SFs) confined within the epilayers that have doping levels of 5 x 10(17) cm(-3) and 5 x 10(18) cm(-3). The SFs, some as wide as 80 nm, give rise to a 3C-SiC like stacking sequence. The lowest doping level is approximately two orders of magnitude below the threshold value of 3 x 10(19) cm(-3) previously proposed for the onset of SF generation in thermally annealed epilayers. The residual stress in all the epilayers was above the critical stress for dislocation formation above 1000degreesC in 4H-SiC, thus the partial dislocations giving rise to SI's may be stress induced and can occur across a much wider range of doping levels than previously believed.
Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Guang Yang,Hao Luo,Jiajun Li,Qinqin Shao,Yazhe Wang,Ruzhong Zhu,Xi Zhang,Lihui Song,Yiqiang Zhang,Lingbo Xu,Can Cui,Xiaodong Pi,Deren Yang,Rong Wang

DOI: https://doi.org/10.1088/1674-4926/43/12/122801

2022-01-01

Journal of Semiconductors

Abstract:Discrimination of dislocations is critical to the statistics of dislocation densities in 4H silicon carbide(4H-Si C), which are routinely used to evaluate the quality of 4H-Si C single crystals and homoepitaxial layers. In this work, we show that the inclination angles of the etch pits of molten-alkali etched 4H-Si C can be adopted to discriminate threading screw dislocations(TSDs),threading edge dislocations(TEDs) and basal plane dislocations(BPDs) in 4H-Si C. In n-type 4H-Si C, the inclination angles of the etch pits of TSDs, TEDs and BPDs in molten-alkali etched 4H-Si C are in the ranges of 27°-35°, 8°-15° and 2°-4°, respectively. In semi-insulating 4H-Si C, the inclination angles of the etch pits of TSDs and TEDs are in the ranges of 31°-34° and 21°-24°, respectively. The inclination angles of dislocation-related etch pits are independent of the etching duration, which facilitates the discrimination and statistic of dislocations in 4H-Si C. More significantly, the inclination angle of a threading mixed dislocations(TMDs)is found to consist of characteristic angles of both TEDs and TSDs. This enables to distinguish TMDs from TSDs in 4H-Si C.
Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Hao Luo,Jiajun Li,Guang Yang,Ruzhong Zhu,Yiqiang Zhang,Rong Wang,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1021/acsaelm.1c01330

IF: 4.494

2022-01-01

ACS Applied Electronic Materials

Abstract:Despite the decades of development of the single-crystal growth and homoepitaxy of 4H silicon carbide (4H-SiC), high-density threading dislocations (TDs) still remain in 4H-SiC. In this work, we show that the diameters, depths, and inclination angles of molten-alkali etched pits can be employed to discriminate threading edge dislocations (TEDs), threading screw dislocations (TSDs), and threading mixed dislocations (TMDs) in 4H-SiC. The formation of etch pits of TEDs, TSDs, and TMDs during molten-alkali etching is found to be assisted by the dislocation line, dislocation step, and successively dislocation line and step, respectively. By inspecting the surface potentials of n-type 4H-SiC with Kelvin probe force microscopy (KPFM), we show that both TSDs and TEDs behave as donors in n-type 4H-SiC, which gives rise to charge depletion at TDs in n-type 4H-SiC. TDs are found to participate in the broad band D1 luminescence of 4H-SiC, as evidenced by the fact that the microphotoluminescence (micro-PL) intensities at the centers of TDs are stronger than those in dislocation-free regions of 4H-SiC. Understandings gained in this work may help the optimization of n-type 4H-SiC by manipulating the electronic and optical properties of TDs.
Nitrogen-Dependent Electronic Properties of Threading Edge Dislocations in 4H-SiC

Jiajun Li,Yazhe Wang,Ruzhong Zhu,Xiaodong Pi,Deren Yang,Rong Wang

DOI: https://doi.org/10.1021/acsaelm.3c00137

IF: 4.494

2023-05-05

ACS Applied Electronic Materials

Abstract:The dependence of the electronic properties of threading edge dislocations (TEDs) on the nitrogen (N) doping of 4H silicon carbide (4H-SiC) is investigated by combining first-principles calculations and experiments. First-principles calculations indicate that N atoms tend to accumulate at the cores of TEDs during the N doping of 4H-SiC, giving rise to the formation of TED-N complexes in N-doped 4H-SiC. The accumulation of N donors at the cores of TEDs leads to the donor-like behavior of TEDs in n-type 4H-SiC. With Kelvin probe force microscopy measurements, we verify that TEDs induce acceptor-like and donor-like states in undoped and N-doped 4H-SiC, respectively. For N-doped 4H-SiC, the resistivity decreases when the N concentration increases. In the meantime, the difference in the local Fermi energy between a TED and the perfect 4H-SiC becomes smaller, indicating that the N accumulation at the cores of TEDs may be saturated.

materials science, multidisciplinary,engineering, electrical & electronic
Analytical Model for the Electron Hall Mobility in the N-Type 4H-Sic

王平,杨银堂,屈汉章

DOI: https://doi.org/10.3969/j.issn.1001-2400.2004.04.012

2004-01-01

Journal of Xidian University

Abstract:Theoretical calculations have been made on the electron Hall mobility and Hall scattering factor in the nitrogen-doped 4H-SiC based on an simplified analytical low field transport model considering five main scattering mechanisms including neutral impurity scattering. The results show that at lower temperatures, with increasing doping concentration, the impact of neutral impurity scattering becomes more significant. However the electron Hall mobility is controlled by intervalley phonon deformation potential scattering when the temperature is higher. In addition, the electron Hall mobility depends strongly on the compensation ratio when the donor concentration is kept constant. The Hall scattering factor is not always equal to one, but has a strong dependence on temperature. Cmparisons with experimental data confirm the present calculation over a wide range of temperatures and doping concentrations.
Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Xiaoshuang Liu,Rong Wang,Junran Zhang,Yunhao Lu,Yiqiang Zhang,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1088/1361-6463/ac9535

2022-01-01

Journal of Physics D Applied Physics

Abstract:In this work, the anisotropic deformation and anisotropic mechanical properties of 4H silicon carbide (4H-SiC) single crystal wafers are proposed by using nanoindentation. The C face of a 4H-SiC wafer has higher hardness and lower fracture toughness than those of the Si face. Because the deformation of 4H-SiC is assisted by the nucleation and slip of basal plane dislocations (BPDs), especially the slip of Si-core partial dislocations (PDs) of the BPDs, the nucleation and slip of the Si-core PDs in the Si face of 4H-SiC is easier than those in the C face, which releases the nanoindentation-induced stress and results in the decrease of the hardness and increase of the fracture toughness of the Si face of 4H-SiC wafers. Due to the hexagonal lattice of 4H-SiC, the hardness along < 1<(1)over bar>00 > of 4H-SiC is higher than that along < 11<(2)over bar>0 >, but the fracture toughness along the < 1<(1)over bar>00 > is lower than that along the < 11<(2)over bar>0 >, as a result of the enhanced glide of dislocations along the most closely-packed direction. The insights gained in this work are expected to shed light on the optimization of the mechanical processing of 4H-SiC wafers.
Theoretical Calculation of the Dislocation Width and Peierls Barrier and Stress for Semiconductor Silicon

Shaofeng Wang,Huili Zhang,Xiaozhi Wu,Ruiping Liu

DOI: https://doi.org/10.1088/0953-8984/22/5/055801

2010-01-01

Journal of Physics Condensed Matter

Abstract:The dislocation width and Peierls barrier and stress have been calculated by the improved Peierls-Nabarro (PN) theory for silicon. In order to investigate the discreteness correction of a complex lattice quantitatively, a simple dynamics model has been used in which interaction attributed to a variation of bond length and angle has been considered. The results show that the dislocation core and mobility will be corrected significantly by the discrete effect. Another improvement is considering the contribution of strain energy in evaluating the dislocation energy. When a dislocation moves, both strain and misfit energies change periodically. Their amplitudes are of the same order, but phases are opposite. Because of the opposite phases, the misfit and strain energies cancel each other and the resulting Peierls barrier is much smaller than that given by the misfit energy conventionally. Due to competition between the misfit and strain energies, a metastable state appears separately for glide 90° and shuffle screw dislocations. In addition, from the total energy calculation it is found that besides the width of dislocation, the core of a free stable dislocation may be different according to where the core center is located. The exact position of the core center can be directly verified by numerical simulation, and provides a new prediction that can be used to verify the validity of PN theory. It is interesting that after considering discrete correction the Peierls stress for glide dislocation coincides with the critical stress at low temperature, and the Peierls stress for shuffle dislocation coincides with the critical stress at high temperature. The physical implication of the results is discussed.
Influence of Nitrogen Concentrations on the Lattice Constants and Resistivities of N-Type 4H-Sic Single Crystals

Yingxin Cui,Xiaobo Hu,Kun Yang,Xianglong Yang,Xuejian Xie,Longfei Xiao,Xiangang Xu

DOI: https://doi.org/10.1021/cg501216d

IF: 4.01

2015-01-01

Crystal Growth & Design

Abstract:4H-SiC single crystals with different nitrogen doping concentrations were grown by sublimation method. After processing, the standard 4H-SiC substrates were obtained. The carrier and nitrogen concentrations in 4H-SiC single crystals were measured by Raman spectroscopy and secondary ion mass spectrometry, respectively. The resistivities of 4H-SiC single crystals were measured by a noncontact resistivity testing system. The influence of nitrogen concentration on the resistivity of 4H-SiC single crystal was assessed. In addition, the structural qualities of 4H-SiC single crystals were investigated by high resolution X-ray diffractometry. The 004, 008 symmetric reflection rocking curves and 102, 204 skew symmetric reflection rocking curves of 4H-SiC single crystals were measured and the lattice constants of 4H-SiC single crystals were accurately determined. The effect of nitrogen concentration on the lattice constants was discussed.
The Relationship Between the Doping Concentration and D Ferromagnetism in N-Type 4H-Sic

Bo Peng,Jiajie Chen,Jichao Hu,Xingzhong Cao,Lei Yuan,Yutian Wang,Yuming Zhang,Renxu Jia

DOI: https://doi.org/10.1063/5.0028458

IF: 2.877

2020-01-01

Journal of Applied Physics

Abstract:To date, research on defect-induced magnetism in SiC has been conducted to clarify the relationship between the ferromagnetic signal and the carrier concentration. It has been experimentally proven that there is an interaction between the d 0 magnetic moment and the hole carrier in p-type 4H-SiC. However, for n-type SiC, the existing theoretical predictions are insufficient to explain the variation in magnetization with the doping concentration. To solve this problem, we prepared 4H-SiC epitaxial layers with different nitrogen doping concentrations and introduced defects by ion implantation. By measuring and analyzing the magnetic properties, we found that the ferromagnetic composition depends on both the implantation dose and the doping concentration. By performing first-principles calculations, we studied the magnetic moments and interactions of defects with different charge states, which is related to defect-induced ferromagnetism. These defects include not only the paramagnetic centers reported in previous studies, such as silicon vacancies and divacancies, but also the N C V Si complex defect of recent interest, which are indicated by positron annihilation experiments. Combining experimental observations with theoretical calculations, we explained the relationship between magnetic properties and the nitrogen doping concentration in the epitaxial samples. Our research will help us to better understand the physical mechanism of defect-induced magnetism in doped semiconductors and provide a potential platform for the control of defect-induced magnetism by carrier density modulation and the fabrication of SiC spintronic devices without transition metals.
The Effect of Shear on Nucleation and Movement of Basal Plane Dislocations in 4H-Sic

Yanwei Yang,Keqiang Li,Zhouyu Tong,Xiaodong Pi,Deren Yang,Yuanchao Huang

DOI: https://doi.org/10.1063/5.0212043

IF: 2.877

2024-01-01

Journal of Applied Physics

Abstract:Basal plane dislocations (BPDs) are a key factor influencing the advancement of the 4H-SiC semiconductor. In this paper, the effects of shear forces on the nucleation and movement of BPDs are revealed by employing molecular dynamics simulations. The stress–strain curves of 4H-SiC subjected to different shear forces at different temperatures are obtained. It is found that the decrease in mechanical properties of 4H-SiC is mainly due to the occurrence of dislocation. This study also delves into the complexities of dislocation entanglement and slip, unraveling the impact on the mechanical properties of 4H-SiC. Moreover, the causes of dislocation within the crystal lattice were clarified from a microscopic atomic vantage point, shedding light on the intricate mechanisms involving chemical bond rupture and regeneration. These findings not only enrich our understanding of BPDs nucleation but also provide invaluable insights for mitigating BPDs in 4H-SiC.
Effects of N on Electronic and Mechanical Properties of H-Type Sic

Liu Yun-Fang,Cheng Lai-Fei,Zeng Qing-Feng,Zhang Li-Tong

DOI: https://doi.org/10.1088/0256-307x/32/8/087103

2015-01-01

Chinese Physics Letters

Abstract:Structural, electronic and mechanical properties of the nH-SiC (n = 2, 4, 6, 8 and 10) polytypes are calculated by using the first-principles calculations based on the density-functional theory approach. The optimized lattice parameters of nH-SiC are in good agreement with the experimental data. The mechanical properties, including elastic constants, bulk modulus, Young's modulus, shear modulus and Poisson's ratio, are calculated. The analysis of elastic properties indicates that the effects of n on the mechanical properties of the five nH-SiC structures have no difference. The indirect band gap relationship for the five polytypes is E-bg2H > E-bg4H > E-bg6H > E-bg10H > E-bg8H.
DFT modelling of the edge dislocation in 4H-SiC

J. Łażewski,P. T. Jochym,P. Piekarz,M. Sternik,K. Parlinski,J. Cholewiński,P. Dłużewski,S. Krukowski

DOI: https://doi.org/10.1007/s10853-019-03630-5

IF: 4.5

2019-04-26

Journal of Materials Science

Abstract:We have presented ab initio study, based on density functional theory methods, of full-core edge dislocation impact on basic properties of 4H-SiC semiconductor. To enable calculations in periodic boundary conditions, we have proposed geometry with two dislocations with opposite Burgers vectors. For this geometry, which determines the distance between dislocations, we have estimated the creation energy per unit length of a single-edge dislocation. The radial distribution function has been used to assess the effect of the dislocations on the local crystal structure. The analysis of the electronic structure reveals mid-gap p states induced by broken atomic bonds in the dislocation core. The maps of charge distribution and electrostatic potential have been calculated, and the significant decrease in the electrostatic barriers in the vicinity of the dislocation cores has been quantified. The obtained results have been discussed in the light of previous findings and calculations based mainly on phenomenological models.

materials science, multidisciplinary
Suppress of Dislocations Induced by Feedstocks Weight in Cast-Mono Crystalline Silicon

Jie Huang,Dongli Hu,Xuegong Yu,Hongrong Chen,Shuai Yuan,Deren Yang

DOI: https://doi.org/10.1016/j.solener.2021.05.035

IF: 7.188

2021-01-01

Solar Energy

Abstract:Dislocation clusters are the most harmful defects in cast-mono crystalline silicon (CM-Si). This work focused on an important source of which, the stress introduced by parasitic weight of raw silicon feedstocks. The impacts of indentation morphology and dopants on dislocation generation and mobilization are studied systematically. A G2 CM-Si ingot with intelligent doping strategy has been grown with or without buffer layer for characterization comparably. It is found that Ga-doping seeds could significantly suppress dislocation generation and movement in the seeds owing to the high Peierls energy and pinning effect of impurity atoms. Besides, the buffer layer can efficiently weaken the generation of dislocation in the ingots ascribed to the decreased stress by widening the indentation area. These results pave a new way to fabricate high-quality CM-Si ingots with low dislocation density for photovoltaic application.
Nitrogen Effects on Generation and Velocity of Dislocations in Czochralski-grown Silicon

I Yonenaga

DOI: https://doi.org/10.1063/1.1990259

IF: 2.877

2005-01-01

Journal of Applied Physics

Abstract:The dynamic properties of individual dislocations in nitrogen (N)-doped Czochralski-grown Si crystals with concentrations up to 6×1015cm−3 were investigated at temperatures of 650–950°C using the etch pit technique and compared with such characteristics of N-free Si crystals. The velocity of dislocations in motion in N-doped crystals was revealed to be unaffected by N doping. It was found that the generation of dislocations from a surface scratch was suppressed in N-doped Si and that the critical stress for dislocation generation increased with N concentration, which is interpreted as being due to dislocation immobilization caused by impurity segregation. N doping is concluded to be effective in the promotion of precipitation of oxygen impurity resulting in immobilization of dislocations.

Numerical Analysis of the Dislocation Density in N-Type 4H-Sic

Effect of nitrogen doping on the dislocation behaviors of 4H-SiC

Doping-dependent Nucleation of Basal Plane Dislocations in 4H-Sic

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Calculation of Dislocation Destiny Using X-Ray Diffraction for 4H-Sic Homoepitaxial Layers

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Distribution of the Electrical Resistivity of a N-Type 4H-Sic Crystal

Residual Stresses and Stacking Faults in N-Type 4H-Sic Epilayers

Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Nitrogen-Dependent Electronic Properties of Threading Edge Dislocations in 4H-SiC

Analytical Model for the Electron Hall Mobility in the N-Type 4H-Sic

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Theoretical Calculation of the Dislocation Width and Peierls Barrier and Stress for Semiconductor Silicon

Influence of Nitrogen Concentrations on the Lattice Constants and Resistivities of N-Type 4H-Sic Single Crystals

The Relationship Between the Doping Concentration and D Ferromagnetism in N-Type 4H-Sic

The Effect of Shear on Nucleation and Movement of Basal Plane Dislocations in 4H-Sic

Effects of N on Electronic and Mechanical Properties of H-Type Sic

DFT modelling of the edge dislocation in 4H-SiC

Suppress of Dislocations Induced by Feedstocks Weight in Cast-Mono Crystalline Silicon

Nitrogen Effects on Generation and Velocity of Dislocations in Czochralski-grown Silicon