Abstract:Carbon impurities in GaN form both acceptors and donors. Donor-to-acceptor ratios (DARs) determine the semi-insulating behavior of carbon-doped GaN (GaN:C) layers and are still debated. Two models are discussed; both can theoretically achieve semi-insulating behavior: the dominant acceptor model (DAM, DAR < 1) and the auto-compensation model (ACM, DAR = 1). We perform a capacitance–voltage analysis on metal/GaN:C/nGaN (n-doped GaN) structures, exhibiting Fermi-level pinning in GaN:C, 0.7 eV above the valence band maximum. This observation coupled with further interpretation clearly supports the DAM and contradicts the ACM. Furthermore, we reveal a finite depletion width of a transition region in GaN:C next to nGaN, where carbon acceptors drop below the Fermi level becoming fully ionized. Calculation of the potential drop in this region exhibits DAR values of 0.5–0.67 for GaN:C with total carbon concentrations of 10 18 cm − 3 and 10 19 cm − 3. Based on those results, we re-evaluate formerly published density functional theory (DFT)-calculated formation energies of point defects in GaN. Unexpectedly, growth in thermodynamic equilibrium with the bulk carbon phase contradicts our experimental analysis. Therefore, we propose the consideration of extreme carbon-rich growth conditions. As bulk carbon and carbon cluster formation are not reported to date, we consider a metastable GaN:C solid solution with the competing carbon bulk phase being kinetically hindered. DFT and experimental results agree, confirming the role of carbon at nitrogen sites as dominant acceptors. Under N-rich conditions, carbon at gallium sites is the dominant donor, whereas additional nitrogen vacancies are generated under Ga-rich conditions.

Carbon doped semi-insulating freestanding GaN crystals by ethylene

Ethylene for carbon doping of GaN by atmospheric pressure metal organic chemical vapor deposition

Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

Optical Characteristics of C-Doped GaN

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Influence of Intrinsic or Extrinsic Doping on Lattice Locations of Carbon in Semi-Insulating GaN

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Unintentionally Doped Semi-Insulating GaN with a Low Dislocation Density Grown by Metalorganic Chemical Vapor Deposition

Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination

Growth And Doping Of Bulk Gan By Hydride Vapor Phase Epitaxy

Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

High-resistivity Unintentionally Carbon-Doped GaN Layers with Nitrogen As Nucleation Layer Carrier Gas Grown by Metal-Organic Chemical Vapor Deposition

Mechanism for Self-Compensation in Heavily Carbon Doped GaN

Influence of gadolinium doping on structural, optical, and electronic properties of polymeric graphitic carbon nitride

Alleviation of the on-state dynamic conductance decline in a GaN high electron mobility transistor with heavy carbon doping

Doping Si, Mg and Ca into GaN based on plasma stimulated room-temperature diffusion

Growth of Freestanding GaN Crystals on Three-Dimensional Mesh Porous Substrate by HVPE

Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN.

Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition