Abstract:In this paper, experiments on 208 MeV Ge ion irradiation with different source-drain bias voltages are carried out for the double-trench SiC metal–oxide–semiconductor field-effect transistors, and the physical mechanism of the single event effect is analyzed. The experimental results show that the drain leakage current of the device increases more obviously with the increase of the initial bias voltage during irradiation. When the bias voltage is 400 V during irradiation, the device has a single event burned at a fluence of 9×10 4 ion/cm 2 , and when the bias voltage is 500 V, the device has a single event burned at a fluence of 3×10 4 ion/cm 2 , so when the LET value is 37.3 MeV·cm 2 /mg, the SEB threshold of DUT does not exceed 400 V, which is lower than 34 % of the rated operational voltage. The post gate-characteristics test results show that the leakage current of the device with a bias voltage of 100 V does not change significantly during irradiation. When the bias voltage is 200 V, the gate leakage and the drain leakage of the device both increase, so do they when the bias voltage is 300 V, which is positively related to bias voltage. In order to further analyze the single particle effect mechanism of device, the simulation is conducted by using TCAD tool. The simulation results show that at low bias voltage, the heavy ion incident device generates electron-hole pairs, the electrons are quickly swept out, and the holes accumulate at the gate oxygen corner under the effect of the electric field, which combines the source-drain bias voltage, leading to the formation of leakage current channels in the gate oxygen layer. The simulation results also show that at high bias voltage, the electrons generated by the incident heavy ion move towards the junction of the N – drift layer and the N + substrate under the effect of the electric field, which further increases the electric field strength and causes significant impact ionization. The local high current density generated by the impact ionization and the load large electric field causes the lattice temperature to exceed the melting point of silicon carbide, causing single event burnout. This work provides a reference and support for studying the radiation effect mechanism and putting silicon carbide power devices into aerospace applications.

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Effect of heavy ion irradiation on the RF performance of 0.18μm bulk Si MOSFETs

Heavy-ion induced gate damage and thermal destruction in double-trench SiC MOSFETs

Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

Study on the Single-Event Burnout Effect Mechanism of SiC MOSFETs Induced by Heavy Ions

Investigation of a radiation-hardened quasi-SOI device: performance degradation induced by single ion irradiation

Heavy ion single event effect in double-trench SiC metal–oxide–semiconductor field-effect transistors

Investigation on TID tolerance of 65nm bulk silicon nMOSFETs

Heavy-ion effects in SiC power MOSFETs with trench-gate design

Impact of TID radiation on hot-carrier effects in 65NM bulk Si NMOSFETs