The Tid Effects Of Rram Based Oxide Material

Yan Wang,Jinshun Bi,Jing Liu,Qi Liu,Hangbing Lv,Shibing Long,Ming Liu

DOI: https://doi.org/10.1109/radecs.2015.7365683

2015-01-01

Abstract:RRAM exhibit highly stable characteristics under TID radiation. But different radiation effects are shown in the RRAM based different oxide. The radiation effects in RRAM based HfO2 and SiO2 are test and analyzed.

What problem does this paper attempt to address?

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Huikai He,Yixin Tan,Choonghyun Lee,Yi Zhao

DOI: https://doi.org/10.3390/electronics12112426

IF: 2.9

2023-01-01

Electronics

Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.
Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Tan-Yi Li,Da-Wei Wang,Sichao Du,Wenchao Chen,Wen-Yan Yin

DOI: https://doi.org/10.1109/ICCEM47450.2020.9219521

2020-01-01

Abstract:Electrothermal performance of Resistive Random Access Memory (RRAM) composed of five different resistive switching oxides is studied numerically in this paper. Finite element method-based parallel computing simulator is employed to conduct the electrothermal simulation of both RRAM cell and array. Simulation results indicate that NiO and ZrO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs generate higher heat than HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> , TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> and ZnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs, as their electric conductivity are higher in the same voltage. During the reset, ZnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAM requires lower voltage to be transferred into high-resistance state due to its higher oxygen vacancy drift rate. The heat crosstalk problem in RRAM array is also investigated, which can decrease reliability during the reset of RRAM. Inactive cells can be transferred into high-resistance state unintentionally with stored information lost. In the same voltage, both HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> and TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs are less affected by heat crosstalk due to their lower oxygen vacancy drift rate.
Total Ionizing Dose (TID) Effects on $\hbox{tao}_{x}$ -Based Resistance Change Memory

Lijie Zhang,Ru Huang,Dejin Gao,Pan Yue,Poren Tang,Fei Tan,Yimao Cai,Yangyuan Wang

DOI: https://doi.org/10.1109/ted.2011.2148121

IF: 3.1

2011-01-01

IEEE Transactions on Electron Devices

Abstract:In this brief, the total ionizing dose (TID) effects of gamma rays generated from a Co-60 source on the TaOx-based resistive switching memory (resistive random-access memory, RRAM) is investigated. The low-resistance state (LRS) of the RRAM is immune to TID effects, whereas the sensitivity of the high-resistance state (HRS) of RRAM to TID effects depends on the dimensions of the device, including the thickness of the oxide film and the area of the device. The HRS of the device with large area and thick oxide layer is vulnerable to TID effects and has a high probability to change into the LRS. Further investigation found that the lower the high resistance, the higher the failure rate of the RRAM device under TID impact, which indicates that the multilevel cell of RRAM should be carefully designed for space system applications considering the radiation effects. The failure of the HRS under TID is explained by defect generation in the oxide film.
Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device.

Fang Yuan,Zhigang Zhang,Jer-Chyi Wang,Liyang Pan,Jun Xu,Chao-Sung Lai

DOI: https://doi.org/10.1186/1556-276X-9-452

2014-01-01

Nanoscale Research Letters

Abstract:The total ionizing dose (TID) effects of (60)Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO x /Pt were studied. The resistance in low resistance state (LRS), set voltage, and reset voltage are almost immune to radiation, whereas the initial resistance, resistance at high resistance state (HRS), and forming voltage were significantly impacted after radiation due to the radiation-induced holes. A novel hybrid filament model is proposed to explain the radiation effects, presuming that holes are co-operated with Ag ions to build filaments. In addition, the thermal coefficients of the resistivity in LRS can support this hybrid filament model. The Ag/AlO x /Pt RRAM devices exhibit radiation immunity to a TID up to 1 Mrad(Si) and are highly suitable for radiation-hard electronics applications.
Highly Stable Radiation-Hardened Resistive-Switching Memory

Yan, Wang,Hangbing Lv,Wang, Wei,Liu, Qi,Shibing Long,Qin Wang,Zongliang Huo,Sen Zhang,YingTao Li,Qingyun Zuo,WenTai Lian,Jianhong Yang,Ming Liu

DOI: https://doi.org/10.1109/LED.2010.2081340

2010-01-01

Abstract:In this letter, the resistive random access memory (RRAM) with metal-insulator-metal structure is investigated for the first time under radiation conditions. The fabricated Cu-doped HfO2-based RRAM devices are found to have immunity from 60Co γ ray of various dose ranges. The basic RRAM parameters such as high-resistance state, low-resistance state, SET/RESET voltages, operation speed, and endurance have nearly no degradation after 60Co γ ray treatment with a total dose as high as 3.6 × 105 rad (Si). Furthermore, a retention characteristic of 105 s is also achieved during radiation. The highly stable characteristics of Cu-doped HfO2 -based RRAM devices under radiation provide RRAM a great potential for aerospace and nuclear applications.
Radiation Tolerance against TID Effect of CuxSiyO-based RRAM

朱伟,简文翔,薛晓勇,林殷茵

DOI: https://doi.org/10.15943/j.cnki.fdxb-jns.2013.03.002

2013-01-01

Abstract:Radiation tolerance against TID effect has been investigated on the CuxSiyO-based resistive random access memory(RRAM).Cobalt-60 γ ray is used to simulate the space radiation environment.The stored information could remain when total dose is cumulated as high as 3000 Gy.Little degradation is shown for cell resistance,write voltage and yield.The good radiation characteristic makes the device promising for the application in radiation harsh environments.
Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices.

Brian Butcher,Xiaoli He,Mengbing Huang,Yan Wang,Qi Liu,Hangbing Lv,Ming Liu,Wei Wang

DOI: https://doi.org/10.1088/0957-4484/21/47/475206

IF: 3.5

2010-01-01

Nanotechnology

Abstract:The resistive switching properties of Cu-doped-HfO2-based resistive-random-access-memory (ReRAM) devices are investigated under proton-based irradiations with different high-range total doses of 1.5, 3 and 5 Giga-rad[Si]. The measurement results obtained immediately after irradiation demonstrate that the proton-based total dose will introduce significant variations in the operation voltages and resistance values. These effects are enhanced almost linearly when the dose increases from 1.5 to 5 Giga-rad[Si]. Furthermore, five days after irradiation, the electrical properties of the device rebound, resulting in reduced operation voltages and resistance values. This is consistent with the time-dependent super-recovery behavior observed previously in CMOS gate oxide. These results can be explained by the proton irradiation effect on the electron/hole trap density inside HfO2 and its impact on ReRAM device metallic filament formation-and-rupture, which is based on electrolyte theory.
The Heavy Ion Radiation Effects On The Pt/Hfo2/Ti Resistive Switching Memory

Yan Wang,Yang Li,Qi Liu,Jinshun Bi,Jing Liu,Haitao Sun,Hangbing Lv,Shibing Long,Kai Xi,Ming Liu

DOI: https://doi.org/10.1109/radecs.2016.8093118

2016-01-01

Abstract:In this summary, the resistive random access memory (RRAM) with the structure of Pt/HfO2/Ti is investigated for applications in radiation circumstance. The heavy ion Kr-86(26+) of HIRFL (The Heavy Ion Research Facility in Lanzhou) is used as the radiation source. The energy of Kr-86(26+) is 25 MeV/u, the LET is 37.6 MeV/(cm(2)/mg), and the fluence of 5e11 is achieved after 2 hours radiation. Basic performance of the Pt/HfO2/Ti is compared before and after radiation. An obvious decrease is shown in the original resistance value after radiation, and the forming process is no longer needed. The HRS, LRS, transition voltage and endurance are still stable after radiation.
Effect Of Tiox Film Thickness On Resistive Switching Behavior Of Tin/Tiox/Hfo2/Pt Rram Device

Xiangxiang Ding,Lifeng Liu,Yulin Feng,Peng Huang

2019-01-01

Abstract:In this work, TiN/TiOx/HfO2/Pt resistive random access memory (RRAM) devices with different TiOx film thickness were fabricated. The distributions of cycle-to-cycle and device-to-device showed that the RRAM devices with thick TiOx film performed high ratio and small switching voltage. Besides, the RRAM device with thick TiOx film under pulse measurement shows as fast as 2Ons pulse width and can be cycled for 1e6 cy.
Investigation on the Response of TaO $_{\rm X}$ -Based Resistive Random-Access Memories to Heavy-Ion Irradiation

Fei Tan,Ru Huang,Xia An,Yimao Cai,Yue Pan,Weikang Wu,Hui Feng,Xing Zhang,Yangyuan Wang

DOI: https://doi.org/10.1109/tns.2013.2287615

IF: 1.703

2013-01-01

IEEE Transactions on Nuclear Science

Abstract:Impact of heavy-ion irradiation on the TaOx-based resistive random-access memory (RRAM) is investigated in this work. After Br ion irradiation, the set voltage of TaOx-based RRAM shows slight change, and negative shift of the forming voltage is observed. For the resistance change of TaOx-based RRAM devices induced by irradiation, the resistance of the low resistance state (LRS) illustrates acceptable change, while the resistance of the high resistance state (HRS) is quite sensitive to heavy ion irradation. Some irradiated devices even change from the HRS into the LRS, which results in disappeared memory window and may be attributed to the displacement damage in the dielectric layer. These results indicate that TaOx-based RRAM devices need to be carefully designed for future space applications.
The heavy ion radiation effects on the Pt/HfO<inf>2</inf>/Ti resistive switching memory

Yan Wang,Yang Li,Qi Liu,Jinshun Bi,Jing Liu,Haitao Sun,Hangbing Lv,Shibing Long,Kai Xi,Ming Liu

DOI: https://doi.org/10.1109/RADECS.2016.8093118

2016-01-01

Abstract:In this article, the resistive random access memory (RRAM) with the structure of Pt/HfO 2 /Ti is investigated for applications in radiation circumstance. The heavy ion 86 Kr 26+ of HIRFL (The Heavy Ion Research Facility in Lanzhou) is used as the radiation source. The energy of 86 Kr 26+ is 25 MeV/u, the LET is 37.6 MeV/(cm 2 /mg), and the fluence of 5e11 is achieved after 2 hours radiation. Basic performance of the Pt/HfO 2 /Ti is compared before and after radiation. An obvious decrease is shown in the original resistance value after radiation, and the forming process is no longer needed. The HRS, LRS, transition voltage and endurance are still stable after radiation.
The Dependence Of Bottom Electrode Materials On Resistive Switching Characteristics For Hfo2/Tiox Bilayer Structure Rram

Jian Liu,Kun-Ji Chen,Zhong-Yuan Ma,Hua-Feng Yang,Xin-Xin Zhang,Yang Sun,Xin-Fan Huang

DOI: https://doi.org/10.1109/icsict.2018.8565024

2018-01-01

Abstract:In this paper, we systematically investigated the dependence of three types of bottom electrode (BE) materials, such as active Cu and Ag, inert Pt and Au, and oxygen-affinity W and Ti, on resistive switching characteristics for HfO2/TiOx bilayer structure RRAM devices with Pt served as the same top electrode (TE). It is found that the RRAM devices with oxygen-affinity BE (W or Ti) can significantly improve the fluctuations of main switching parameters compared to the other two types of BE. Moreover, the Reset processes in RRAM devices with oxygen-affinity BE exhibit gradual transition, which can be used to obtain multilevel storage capability. Thus, a reliable 2-Bit storage operation can be successfully obtain in Ti BE/HfO2/TiOx/Pt TE RRAM device by controlling the Reset-stop voltage. These results provide insights into the proper selection of oxide-based switching layer and electrode materials to improve the performance of the related RRAM devices.
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Zhihua Yong,Karl-Magnus Persson,Mamidala Saketh Ram,Giulio D'Acunto,Yi Liu,Sandra Benter,Jisheng Pan,Zheshen Li,Mattias Borg,Anders Mikkelsen,Lars-Erik Wernersson,Rainer Timm

DOI: https://doi.org/10.1016/j.apsusc.2021.149386

IF: 6.7

2021-06-01

Applied Surface Science

Abstract:Resistive random access memory (RRAM) technologies based on non-volatile resistive filament redox switching oxides have the potential of drastically improving the performance of future mass-storage solutions. However, the physico-chemical properties of the TiN bottom metal electrode (BME) can significantly alter the resistive switching (RS) behavior of the oxygen-vacancy RRAM devices, yet the correlation between RS and the physico-chemical properties of TiN and HfOx/TiN interface remains unclear. Here, we establish this particular correlation via detailed material and electrical characterization for the purpose of achieving further performance enhancement of the stack integration. Two types of RRAM stacks were fabricated where the TiN BME was fabricated by physical vapor deposition (PVD) and atomic layer deposition (ALD), respectively. The HfOx layer in HfOx/PVD-TiN is more oxygen deficient than that of the HfOx/ALD-TiN because of more defective PVD-TiN and probably because pristine ALD-TiN has a thicker TiO2 overlayer. Higher concentration of oxygen vacancies induces a larger magnitude of band bending at the HfOx/PVD-TiN interface and leads to the formation of a higher Schottky barrier. Pulsed endurance measurements of up to 106 switches, with 10 μA ± 1.0 V pulses, demonstrate the potential of the studied ultra-thin-HfOx/TiN device stack for dense, large scale, and low-power memory integration.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer

Yi-Shao Chen,Zongwei Wang,Zhihong Zhang,Li Wang,Yichen Fang,Jen-Chung Lou,Kaihui Liu,Jintong Xu,Yimao Cai,Ru Huang

DOI: https://doi.org/10.1109/nvmts.2018.8603102

2018-01-01

Abstract:In this paper, we investigated the electrical characteristics of RRAM with TiN/BNNF/HfO2/TiN crossbar structure. The hexagonal boron nitride nanofilm (BNNF) was transferred to the interface between the TiN top electrode and the HfO2 switching layer to form a BNNF/HfO2 bilayer structure. Transmission electron microscopy spectra confirms the BNNF exists between TiN and HfO2 layers. The TiN/BNNF/HfO2/TiN structure was observed to have several great performance as great uniformity and endurance by inserting an excellent property of the BNNF. The nonlinear current behavior in LRS current of the TiN/BNNF/HfO2/TiN crossbar structure can be attributed to the BNNF influence the current conduction mechanism owing to forming a high barrier height on TiN/HfO2 interface.
Study on ion dynamics of hafnium oxide RRAM by electrode thermal effect

Sichen Qin,Yifei Ma,Qian Wang,Jiawei Zhang,Guiquan Zhang,Lixin Yang,Rui Liu

DOI: https://doi.org/10.1016/j.egyr.2022.11.132

IF: 5.2

2022-11-29

Energy Reports

Abstract:Resistive random access memory (RRAM) has become one of the representatives of the next generation of nonvolatile memory because of its excellent performance, and the data reading function is caused by the growth and fracture of the conductive filament (CF) in the switch layer. Therefore, the study of the thermal properties of materials on the conductive mechanism is a step that cannot be ignored. In this paper, a numerical model of filament dissolution caused by the coupling effect of Joule heat and electric field in resistance elements is established. The influence of the thermal field on the electric field and ion mobility during device setup and reset is explained by solving partial differential equations. On this basis, the importance of electrode parameters for resistive switching behavior is emphasized. The results show that the best performance can be obtained at 298 K when TiN is selected as the top electrode material of the equipment. This work has deepened the understanding of RRAM resistance switch characteristics and has guiding significance for selecting memristor materials and promoting its industrialization process.

energy & fuels
Experimental Investigation of the Scalability of RRAM Device with Pt/[HfO<inf>x</inf>/AlO<inf>y</inf>]<inf>m</inf>/TiN Structure

Wensheng Shen,Peng Huang,Yulin Feng,Zheng Zhou,Dongbin Zhu,Lifeng Liu,Jinfeng Kang,Xing Zhang

DOI: https://doi.org/10.1109/ICSICT.2018.8564856

2018-01-01

Abstract:In order to investigate the scalability of RRAM device, different RRAM cells from 50 μm to 50 nm with Pt/[HfO x /AlO y ] m /TiN structure were fabricated. Scaling trends of forming and resistive switching characteristics are experimentally presented. With cell area scaling down, forming voltage increases severely, while set voltage shows no obvious difference. Devices keep the same switching performances while scaling, such as resistance window and uniformity. In order to solve the vital issue of increased forming voltage, an effective method of increasing the temperature during forming process to reduce forming voltage is proposed and experimentally demonstrated.
Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfOx-based RRAM devices

Jiao Bai,Weiwei Xie,Dehao Qu,Shengsheng Wei,Yue Li,Fuwen Qin,Min Ji,Dejun Wang

DOI: https://doi.org/10.1088/1361-6528/acc078

IF: 3.5

2023-03-04

Nanotechnology

Abstract:Y-doping can effectively improve the performance of HfOx-based resistive random-access memory (RRAM) devices, but the underlying physical mechanism of Y doping affecting the performance of HfOx-based memristors is still missing and unclear. Although impedance spectroscopy (IS) has been widely used to investigate impedance characteristics and switching mechanisms of RRAM devices, there is less IS analysis on Y-doped HfOx-based RRAM devices as well as devices at different temperatures. Here, the effect of Y doping on the switching mechanism of HfOx-based RRAM devices with a Ti/HfOx/Pt structure were reported using current–voltage (I–V) characteristics and IS. The results indicated that doping Y into HfOx films could decrease the forming/operate voltage and improve the RS uniform. Both doped and undoped HfOx-based RRAM devices obeyed the oxygen vacancies (Vo) conductive filament model along the grain boundary (GB). Additionally, the GB resistive activation energy of the Y-doped device was inferior to that of the undoped device. It exhibited a shift of the Vo trap level towards the conduction band bottom after Y doping in the HfOx film, which was the main reason for the improved RS performance.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Thermal Stability of HfO X -Based Resistive Memory Array: A Temperature Coefficient Study

Xiao Hu Wang,Huaqiang Wu,Bin Gao,Xinyi Li,Ning Deng,He Qian

DOI: https://doi.org/10.1109/led.2017.2787124

IF: 4.8157

2017-01-01

IEEE Electron Device Letters

Abstract:In HfOx-based RRAM array, the temperature dependent shift of resistance at the low resistance state is statistically distributed. The differences in temperature dependent shifts among cells bring challenge to the reliability of analog or multilevel resistive switching behavior, namely thermal instability, which is characterized by the temperature coefficient (T-alpha) of RRAM. Its effect on RRAM performances was studied by pulse programming and retention measurement. Through atomistic simulation, this letter showed that thermal instability of cells with a positive T-alpha was related to the arrangement of oxygen vacancy inside the switching layer. Based on this model, the probability of cells with a positive T-alpha was found to be effectively reduced by introducing a baking process which led to an overall improvement of retention for the 1 k bit array.
Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random-Access Memory Studied via Electrically Detected Magnetic Resonance

D J McCrory,P M Lenahan,D M Nminibapiel,D Veksler,J T Ryan,J P Campbell

DOI: https://doi.org/10.1109/TNS.2018.2820907

Abstract:We observe a gamma-irradiation induced change in electrically detected magnetic resonance (EDMR) in TiN/Ti/HfO2/TiN resistive random access memory (RRAM). EDMR measurements exclusively detect electrically active defects which are directly involved in the transport mechanisms within these devices. The EDMR response has an isotropic g-value of 2.001 ± 0.0003. The response increases dramatically with increased gamma-irradiation. We tentatively associate this EDMR response with spin dependent trap assisted tunneling (SDTAT) events at O 2 - centers coupled to hafnium ions. Although our study cannot fully identify the role of these defects in electronic transport, the study does unambiguously identify changes in transport defects caused by the ionizing radiation on defects involved in electronic transport in RRAM devices. This work also contributes more broadly to the RRAM field by providing direct, though incomplete, information about atomic scale defects involved in electronic transport in leading RRAM systems.
Insight into interface behavior and microscopic switching mechanism for flexible HfO2 RRAM

Jingwei Zhang,Fang Wang,Chuang Li,Xin Shan,Ange Liang,Kai Hu,Yue Li,Qi Liu,Yaowu Hao,Kailiang Zhang

DOI: https://doi.org/10.1016/j.apsusc.2020.146723

IF: 6.7

2020-10-01

Applied Surface Science

Abstract:A high-performance flexible HfO2 resistive random access memory (RRAM) device is fabricated herein on a polyimide (PI) substrate, and the effect of different top electrodes (TE) on RRAM characteristics were investigated with the same TiN bottom electrode. Compared with Al or Ni TEs, the switching characteristics of devices with indium tin oxide (ITO) TEs are improved, producing a low power consumption (50 µ V for SET and 15 µ V for RESET) and high DC endurance cycles (>3 × 105). The flexible devices show stable resistive properties under different bending radii of up to 4 mm, and over 1.5 × 105 writing/erasing cycles are confirmed after bending the device 1,000 times. The switching mechanism based on ITO/HfO2 interfacial reactions is constructed, and the microscopic oxygen vacancies distribution under directional external biases is elaborated according to the C-V test under various frequencies, HRTEM and XPS data. Furthermore, it is revealed that the interface layer between the TE and the switching layer is the key role, which can maintain switching behaviors and improve electronic properties with the presence of a mechanical stress because of the stable interfacial reactions caused by Sn4+ in ITO film.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films

The Tid Effects Of Rram Based Oxide Material

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Total Ionizing Dose (TID) Effects on $\hbox{tao}_{x}$ -Based Resistance Change Memory

Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device.

Highly Stable Radiation-Hardened Resistive-Switching Memory

Radiation Tolerance against TID Effect of CuxSiyO-based RRAM

Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices.

The Heavy Ion Radiation Effects On The Pt/Hfo2/Ti Resistive Switching Memory

Effect Of Tiox Film Thickness On Resistive Switching Behavior Of Tin/Tiox/Hfo2/Pt Rram Device

Investigation on the Response of TaO $_{\rm X}$ -Based Resistive Random-Access Memories to Heavy-Ion Irradiation

The heavy ion radiation effects on the Pt/HfO<inf>2</inf>/Ti resistive switching memory

The Dependence Of Bottom Electrode Materials On Resistive Switching Characteristics For Hfo2/Tiox Bilayer Structure Rram

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer

Study on ion dynamics of hafnium oxide RRAM by electrode thermal effect

Experimental Investigation of the Scalability of RRAM Device with Pt/[HfO<inf>x</inf>/AlO<inf>y</inf>]<inf>m</inf>/TiN Structure

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfOx-based RRAM devices

Thermal Stability of HfO X -Based Resistive Memory Array: A Temperature Coefficient Study

Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random-Access Memory Studied via Electrically Detected Magnetic Resonance

Insight into interface behavior and microscopic switching mechanism for flexible HfO2 RRAM