Investigation of Radiation Effect on Ge P-Channel Ferroelectric FET Memory

Hao-Kai Peng,Jian-Zhi Chen,Kai-Sheun Lee,Kai-Yang Huang,Yung-Hsien Wu
DOI: https://doi.org/10.1109/led.2023.3265849
IF: 4.8157
2023-01-01
IEEE Electron Device Letters
Abstract:Zr-doped HfO2(HZO)-based germanium (Ge) p-channel ferroelectric FET (p-FeFET) memory devices with microwave annealing (MWA) followed by rapid thermal annealing (RTA) are employed as the platform to investigate the impact of $gamma $ -ray radiation on the device performance. With a radiation dose of 1 Mrad, the memory window (MW) degrades from 2.5 V to 2.0 V accompanied by the significantly increased off-state current. The deleterious radiation effect is ascribed to the susceptible quality of the interface between the gate dielectric and source/drain region due to exacerbated charge trapping for the Ge substrate. These trapped charges also screen the polarization charges after applying a voltage pulse and lead to increased read-after-write latency. Nevertheless, compared with the irradiated HfO2-based FeFET memories in the literature, the Ge p-FeFETs in this work demonstrate competitive anti-radiation capability in terms of a large MW of 1.5 V even after $10^{{5}}$ cycles by bipolar stress (±4 V/ $1~mu ext{s}$ ) and desirable retention up to 10 years under low voltage operation.
engineering, electrical & electronic
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