Abstract:A novel defect control approach based on laminated HfO$_2$/ZrO$_2$ with multifunctional TiN/Mo/TiOxNy electrode is proposed to significantly improve the endurance and data retention in HZO-based ferroelectric capacitor. The O-rich interface reduces leakage current and prolong the endurance up to 1011 cycles while retaining a 2Pr value of 34 ($\mu$C/cm$^2$ ) at 3.4MV/cm. Using first-principles calculations and experiments, we demonstrate that the enhancement of endurance is ascribed to the higher migration barrier of oxygen vacancies within the laminated HZO film and higher work function of MoO$_x$/TiO$_x$N$_y$ between top electrode and the insulating oxide. This 2.5-nm-thick TiOxNy barrier further increase the grain size of HZO, lowering the activation field and thus improving polarization reversal speed. This interfacial layer further decreases the overall capacitance, increases the depolarization field, thereby enhancing the data retention. By fitting the data using the Arrhenius equation, we demonstrate a 10-year data retention is achieved at 109.6 $^\circ$C, surpassing traditional SS-HZO of 78.2 $^\circ$C with a 450$^\circ$C RTA (required by backend-of-the-line). This work elucidates that interfacial engineering serves as a crucial technology capable of resolving the endurance, storage capability, and high-temperature data retention issues for ferroelectric memory.

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High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

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Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

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The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Greatly enhanced fatigue resistance in superlattices

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High endurance (>1012) via optimized polarization switching ratio for Hf0.5Zr0.5O2-based FeRAM

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Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hf x Zr 1- x O 2