Abstract:Ferroelectricity in crystalline hafnium oxide has attracted considerable attention because of its potential application for memory devices. A recent breakthrough involves electric-field-induced crystallization, allowing HfO 2 -based materials to avoid high-temperature crystallization, which is unexpected in the back-end-of-line process. However, due to the lack of clarity in understanding the mechanisms during the crystallization process, we aim to employ theoretical methods for simulation, to guide experimental endeavors. In this work, we extended our phase-field model by coupling the crystallization model and time-dependent Ginzburg-Landau equation to analyze the crystalline properties and the polarization evolution of Hf 0.5 Zr 0.5 O 2 thin film under applying an electric field periodic pulse. Through this approach, we found a wake-up effect during the process of crystallization and a transformation from orthorhombic nano-domains to the stripe domain. Furthermore, we have proposed an innovative artificial neural synapse concept based on the continuous polarization variation under applied electric field pulses. Our research lays the theoretical groundwork for the advancement of electric-field-induced crystallization in the hafnium oxide system.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **Through the mechanism and characteristics in the crystallization process of hafnium - zirconium oxide (Hf0.5Zr0.5O2) thin films induced by electric fields, provide theoretical support for low - temperature crystallization, and explore its application potential in ferroelectric artificial synapses**. Specifically, this research mainly focuses on the following aspects: 1. **Understanding the mechanism of electric - field - induced crystallization**: - Traditional hafnium oxide (HfO2) materials require high temperatures to achieve crystallization, which is not ideal in back - end processes. Electric - field - induced crystallization can achieve crystallization at lower temperatures, avoiding the need for high - temperature treatment. - However, the specific mechanism of electric - field - induced crystallization is still unclear, so theoretical simulations are required to reveal the details of this process. 2. **Expanding the phase - field model**: - The author combines the phase - field model with the time - dependent Ginzburg - Landau equation to analyze the crystallization properties and polarization evolution of Hf0.5Zr0.5O2 thin films under the action of electric fields. - Through this expanded model, researchers can more accurately simulate and predict the process of electric - field - induced crystallization. 3. **Exploring the changes in polarization characteristics during the crystallization process**: - The research found that there is a "wake - up effect" during the crystallization process, that is, with the application of periodic electric - field pulses, the polarization hysteresis loop gradually opens, the remanent polarization value increases from nearly zero to 24 μC/cm², and the saturation polarization reaches 32 μC/cm². - This phenomenon is of great significance for the development of high - performance ferroelectric memories. 4. **Proposing the concept of artificial neural synapses based on continuous polarization changes**: - Based on the continuous change of polarization during the electric - field - induced crystallization process, researchers proposed a concept of artificial neural synapses. - By controlling the crystallinity in different regions, functions similar to biological synapses, such as long - term potentiation (LTP), can be achieved, thus providing new ideas for neuromorphic computing. In summary, this paper aims to deeply understand the mechanism of electric - field - induced crystallization through theoretical simulations and experimental verifications, and explore its application potential in ferroelectric materials and neuromorphic computing. This not only helps to promote the development of low - temperature crystallization technology, but also provides a theoretical basis for the design of new ferroelectric memories and artificial neural networks.

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