Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its electrically addressable vertical polarization has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in $\alpha$-In$_2$Se$_3$. The processes of vertical polarization switching in monolayer $\alpha$-In$_2$Se$_3$ are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting unusual avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of $\alpha$-In$_2$Se$_3$, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.

Stacking Selected Polarization Switching and Phase Transition in Vdw Ferroelectric Α-In2se3 Junction Devices

Ferroelectric Domain and Switching Dynamics in Curved In2Se3: First-Principles and Deep Learning Molecular Dynamics Simulations.

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Intrinsic ferroelectric switching in two-dimension $α$-In$_2$Se$_3$

Effect of Dislocation Walls on the Polarization Switching of a Ferroelectric Single Crystal

Intrinsic Ferroelectric Switching in Two-Dimensional α-In 2 Se 3

Domain nucleation kinetics and polarization-texture-dependent electronic properties in two-dimensional α-In2Se3 ferroelectrics

Layer-dependent Ferroelectricity in 2H-Stacked Few-Layer Α-In2se3

Resolving Polarization Switching Pathways of Sliding Ferroelectricity in Trilayer 3R-MoS2

Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor

Polarization switching induced by domain wall sliding in two-dimensional ferroelectric monochalcogenides

Picometer‐Level In Situ Manipulation of Ferroelectric Polarization in Van der Waals layered InSe

Layer-dependent ferroelectricity in 2H-stacked few-layer α-In 2 Se 3

Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer

Non-volatile electrical polarization switching via domain wall release in 3R-MoS$_2$ bilayer

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides

Modulating the Band Alignments of Two-Dimensional In2Se3/InSe Heterostructure via Ferroelectric Polarization and Interlayer Coupling

Atomic-level polarization reversal in sliding ferroelectric semiconductors

Atomic-scale Mechanisms of Ferroelastic Domain-Wall-mediated Ferroelectric Switching

Electronic characteristics of the two-dimensional van der Waals ferroelectric α-In2Se3/Cs3Bi2I9 heterostructures