Abstract:This work demonstrates the odd‐even layer‐dependence of out‐of‐plane ferroelectricity in ε‐InSe. The device based on the ε‐InSe achieves an on/off ratio of 104 in ferroelectric tunneling junction and ultrafast bulk photovoltaic response in photodetector in the near‐infrared band. Moreover, the photoresponse in ε‐InSe can even exceed graphene in the same conditions, confirming the possibility of application in multifunctional devices. 2D sliding ferroelectric semiconductors have greatly expanded the ferroelectrics family with the flexibility of bandgap and material properties, which hold great promise for ultrathin device applications that combine ferroelectrics with optoelectronics. Besides the induced different resistance states for non‐volatile memories, the switchable ferroelectric polarizations can also modulate the photogenerated carriers for potentially ultrafast optoelectronic devices. Here, it is demonstrated that the room temperature sliding ferroelectricity can be used for ultrafast switchable photovoltaic response in ε‐InSe layers. By first‐principles calculations and experimental characterizations, it is revealed that the ferroelectricity with out‐of‐plane (OOP) polarization only exists in even layer ε‐InSe. The ferroelectricity is also demonstrated in ε‐InSe‐based vertical devices, which exhibit high on‐off ratios (≈104) and non‐volatile storage capabilities. Moreover, the OOP ferroelectricity enables an ultrafast (≈3 ps) bulk photovoltaic response in the near‐infrared band, rendering it a promising material for self‐powered reconfigurable and ultrafast photodetector. This work reveals the essential role of ferroelectric polarization on the photogenerated carrier dynamics and paves the way for hybrid multifunctional ferroelectric and optoelectronic devices.

Reversible electrochromism in α-In2Se3 through ferroelectric switching induced phase transition

Ferroelectric Domain and Switching Dynamics in Curved In2Se3: First-Principles and Deep Learning Molecular Dynamics Simulations.

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Intrinsic Ferroelectric Switching in Two-Dimensional α-In 2 Se 3

Domain nucleation kinetics and polarization-texture-dependent electronic properties in two-dimensional α-In2Se3 ferroelectrics

Intrinsic ferroelectric switching in two-dimension $α$-In$_2$Se$_3$

Reversible Thermally Driven Phase Change of Layered In 2 Se 3 for Integrated Photonics

Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε‐InSe Layers

Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor

Light-Driven Domain Switching on a Photochromic Ferroelectric

Picometer‐Level In Situ Manipulation of Ferroelectric Polarization in Van der Waals layered InSe

Electrical control of metal–insulator transition and magnetism in asymmetric multiferroic InCrX3 (X = S, Se) monolayers

Ferroelectrically tunable topological phase transition in In$_2$Se$_3$ thin films

Stacking Selected Polarization Switching and Phase Transition in Vdw Ferroelectric Α-In2se3 Junction Devices

Reversible Gas Sensing by Ferroelectric Switch and 2D Molecule Multiferroics in In2Se3 Monolayer

Multiple sliding ferroelectricity of rhombohedral-stacked InSe for reconfigurable photovoltaics and imaging applications

Substrate-induced phase control of In2Se3 thin films

Out-of-plane Piezoelectricity and Ferroelectricity in Layered $α$-In2Se3 Nano-flakes