Abstract:Two-dimensional (2D) materials and van der Waals heterostructures with atomic-scale thickness provide enormous potential for advanced science and technology. However, insufficient knowledge of compatible synthesis impedes wafer-scale production. PdSe2 and Pd2Se3 are two of the noble transition-metal chalcogenides with excellent physical properties that have recently emerged as promising materials for electronics, optoelectronics, catalyst, and sensors. This research presents a feasible approach to synthesize PdSe2 and Pd2Se3 with inherently asymmetric structure on honeycomb lattice 2D monolayer substrates of graphene and MoS2. We directly deposit a molecular transition-metal precursor complex on the surface of the 2D substrates, followed by low-temperature selenization by chemical vapor flow. Parameter control leads to tuning of the material from monolayer nanocrystals with Pd2Se3 phase, to continuous few-layer PdSe2 films. Annular dark-field scanning transmission electron microscopy (ADF-STEM) reveals the structure, phase variations, and heteroepitaxy at the atomic level. PdSe2 with unconventional interlayer stacking shifts appeared as the kinetic product, whereas the bilayer PdSe2 and monolayer Pd2Se3 are the thermodynamic product. The epitaxial alignment of interlayer rotation and translation between the PdSe2 and underlying 2D substrate was also revealed by ADF-STEM. These results offer both nanoscale and atomic-level insights into direct growth of van der Waals heterostructures, as well as an innovative method for 2D synthesis by predetermined nucleation.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c04230?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c04230</a>.Further details of precursor distributions of different concentrations before the selenization process, growth features corresponding to different concentrations, ADF-STEM images of the commercial sample, structural analysis of the area adjacent to the seeds, phase models of M-PdSe2 and O-PdSe2, another example of the kinetic products, the commensurate lattice of Pd2Se3 on substrates, images of growth results under sulfurization (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c04230/suppl_file/nn0c04230_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Controllable Phase Transformation by Van der Waals Encapsulation in Electrochemically Exfoliated PdSe2 Nanosheets

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Preparation of Single-Layer MoS(2x)Se2(1-x) and Mo(x)W(1-x)S2 Nanosheets with High-Concentration Metallic 1T Phase.

Phase Variations and Layer Epitaxy of 2D PdSe 2 Grown on 2D Monolayers by Direct Selenization of Molecular Pd Precursors

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

High-metallic-phase-concentration Mo1–xWxS2 nanosheets with expanded interlayers as efficient electrocatalysts

Thickness-dependent Carrier Transport of PdSe2 Films Grown by Plasma-Assisted Metal Selenization

Thickness-dependent carrier transport of PdSe 2 films grown by plasma-assisted metal selenization

Anisotropic Growth and Scanning Tunneling Microscopy Identification of Ultrathin Even-Layered PdSe2 Ribbons.

Atomic-Scale Observation of Reversible Thermally Driven Phase Transformation in 2D In2Se3

Homogeneous Platinum Diselenide Metal/semiconductor Coplanar Structure Fabricated by Selective Thickness Control.

On-device phase engineering

Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2

Construction of Bilayer PdSe 2 on Epitaxial Graphene

Formation Of Hexagonal Pdse2 For Electronics And Catalysis

Antioxidant Triggered Metallic 1T' Phase Transformations of Chemically Exfoliated Tungsten Disulfide (WS2 ) Nanosheets

van der Waals epitaxial growth of ultrathin metallic NiSe nanosheets on WSe 2 as high performance contacts for WSe 2 transistors

PdSe2/MoSe2: A promising van der waals heterostructure for field effect transistor application

Layer-Dependent and In-Plane Anisotropic Properties of Low-Temperature Synthesized Few-Layer PdSe2 Single Crystals.

Achieving Ultrahigh Electron Mobility in PdSe2 Field‐Effect Transistors via Semimetal Antimony as Contacts

Van der Waals stacking of multilayer In2Se3 with 2D metals induces transition from Schottky to Ohmic contact