Abstract:Two-dimensional (2D) materials, consisting of atomically thin crystal layers bound by the van der Waals force, have attracted much interest because of their potential in diverse technologies, including electronics, optoelectronics and catalysis1–10. In particular, solution-processable 2D semiconductor (such as MoS2) nanosheets are attractive building blocks for large-area thin-film electronics. In contrast to conventional zero- and one-dimensional nanostructures (quantum dots and nanowires, respectively), which are typically plagued by surface dangling bonds and associated trapping states, 2D nanosheets have dangling-bond-free surfaces. Thin films created by stacking multiple nanosheets have atomically clean van der Waals interfaces and thus promise excellent charge transport11–15. However, preparing high-quality solution-processable 2D semiconductor nanosheets remains a challenge. For example, MoS2 nanosheets and thin films produced using lithium intercalation and exfoliation are plagued by the presence of the metallic 1T phase and poor electrical performance (mobilities of about 0.3 square centimetres per volt per second and on/off ratios of less than 10)2,12, and materials produced by liquid exfoliation exhibit an intrinsically broad thickness distribution, which leads to poor film quality and unsatisfactory thin-film electrical performance (mobilities of about 0.4 square centimetres per volt per second and on/off ratios of about 100)14,16,17. Here we report a general approach to preparing highly uniform, solution-processable, phase-pure semiconducting nanosheets, which involves the electrochemical intercalation of quaternary ammonium molecules (such as tetraheptylammonium bromide) into 2D crystals, followed by a mild sonication and exfoliation process. By precisely controlling the intercalation chemistry, we obtained phase-pure, semiconducting 2H-MoS2 nanosheets with a narrow thickness distribution. These nanosheets were then further processed into high-performance thin-film transistors, with room-temperature mobilities of about 10 square centimetres per volt per second and on/off ratios of 106 that greatly exceed those obtained for previous solution-processed MoS2 thin-film transistors. The scalable fabrication of large-area arrays of thin-film transistors enabled the construction of functional logic gates and computational circuits, including an inverter, NAND, NOR, AND and XOR gates, and a logic half-adder. We also applied our approach to other 2D materials, including WSe2, Bi2Se3, NbSe2, In2Se3, Sb2Te3 and black phosphorus, demonstrating its potential for generating versatile solution-processable 2D materials.

Phase-switchable Preparation of Solution-Processable WS2 Mono- or Bilayers

Structural Phase Transition of Multilayer VSe2.

Preparation of Single-Layer MoS(2x)Se2(1-x) and Mo(x)W(1-x)S2 Nanosheets with High-Concentration Metallic 1T Phase.

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Reversible Semimetal-Semiconductor Transition of Unconventional-Phase WS2 Nanosheets.

Exfoliation of Bulk 2H-Mos 2 into Bilayer 1T-Phase Nanosheets Via Ether-Induced Superlattices

Phase-selective Synthesis of 1T′ MoS2 Monolayers and Hetero-Phase Bilayers

Unraveling High-Yield Phase-Transition Dynamics in Transition Metal Dichalcogenides on Metallic Substrates.

Potential 2D Materials with Phase Transitions: Structure, Synthesis, and Device Applications

Reversible H-T′ Phase Transition in Monolayer Molybdenum Disulfide Via Electron Beam Assisted Solid State Lithiation/delithiation

High intrinsic phase stability of ultrathin 2M WS2

Metastable Phase Control of Two-Dimensional Transition Metal Dichalcogenides on Metal Substrates

Phase evolution of lithium intercalation dynamics in 2H-MoS 2 .

Defect-nucleated Phase Transition in Atomically-Thin WS2

General Bottom-Up Colloidal Synthesis of Nano-MonolayerTransition-Metal Dichalcogenides with High 1T-Phase Purity

Composition Dependence of the Charge Driven Phase Transition in Group-VI Transition Metal Dichalcogenides

Composition- and Phase-Controlled Synthesis and Applications of Alloyed Phase Heterostructures of Transition Metal Disulphides.

Direct Observation of Semiconductor-Metal Phase Transition in Bilayer Tungsten Diselenide Induced by Potassium Surface Functionalization.

Realization of vertical metal semiconductor heterostructures via solution phase epitaxy

Controllable Synthesis of Few-Layer Ammoniated 1T'-Phase WS2 As an Anode Material for Lithium-Ion Batteries.

Solution-processable 2D semiconductors for high-performance large-area electronics