Abstract: Photodetectors with high responsivity, broadband response to mid-infrared range are in a great demand in optical detection area. Topological charge-density-wave (CDW) semimetal materials with high carrier mobility and near zero bandgap provide an emerging route to meet the demand. Here we firstly investigated the photo/magnetic field reshaped CDW melting phenomenon of quasi one dimensional (1D) topological CDW semimetal (TaSe4)2I. Two orders of magnitude of hysteretic resistance variation is achieved due to CDW melting, which can be manipulated by electric, magnetic field or photoexcitation. In situ polarized Raman scattering spectroscopy reveals the concurrent occurrence of both electronic and structural phase transition. Surprisingly, the phase transition could be driven by applying a minimum voltage interval of 10 {\mu}V or a magnetic field interval of 83 Oe at a moderate temperature 120 K. The sharpness of the transition is manifested by single point current jumping (SPCJ). Photodetectors based on this transition has much superior performance than that of quasi two dimensional (2D) TaS2 reported in literature, which is also elaborated by our density functional theory (DFT) calculation. Photoresponsivity at 120 K from visible (405 A/W @ 532 nm) to mid-infrared (31.67 A/W @ 4.73 um) and detectivity (7.2E9 Jones @ 532 nm, 5.6E8 Jones @ 4.73 um) are both one order of magnitude higher than that of TaS2 while the photoresponsivity and detectivity also outperforms commercialized HgCdTe material. Our work not only reveals the important role of dimensionality in CDW phase transition, but also paves a new way for implementing ultrasensitive, broadband photodetector as well as transconductance transistor, memory devices by exploiting quasi-1D topological CDW materials

Reversible Semimetal-Semiconductor Transition of Unconventional-Phase WS2 Nanosheets.

Phase-switchable Preparation of Solution-Processable WS2 Mono- or Bilayers

Unraveling High-Yield Phase-Transition Dynamics in Transition Metal Dichalcogenides on Metallic Substrates.

Direct Observation of Semiconductor-Metal Phase Transition in Bilayer Tungsten Diselenide Induced by Potassium Surface Functionalization.

Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices

Ultrasensitive resistance switching and giant photoresponsivity from visible to mid-infrared of quasi one-dimensional Weyl semimetal (TaSe4)2I

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Topological Phase Transition Between Distinct Weyl Semimetal States in MoTe2

Terahertz Driven Reversible Topological Phase Transition of Monolayer Transition Metal Dichalcogenides

Reversible H-T′ Phase Transition in Monolayer Molybdenum Disulfide Via Electron Beam Assisted Solid State Lithiation/delithiation

Topological Phase Transition: Terahertz Driven Reversible Topological Phase Transition of Monolayer Transition Metal Dichalcogenides (adv. Sci. 12/2021)

Does the metallic 1T phase WS2 really exist?

High Thermoelectric and Reversible P-N-p Conduction Type Switching Integrated in Dimetal Chalcogenide.

Modulating the Phase Transition Between Metallic and Semiconducting Single-Layer Mos2 and Ws2 Through Size Effects

Modulating Peierls distortion of 1T_prime MoS2 via charge doping: a new charge density wave phase, reversible phase transition, and excellent electromechanical properties

Charge Mediated Reversible Metal-Insulator Transition in Monolayer Mote2 and Wxmo1-Xte2 Alloy

High Intrinsic Phase Stability of Ultrathin 1T′ WS2

Metastable Phase Control of Two-Dimensional Transition Metal Dichalcogenides on Metal Substrates

Salt‐assisted 2H‐to‐1T′ Phase Transformation of Transition Metal Dichalcogenides

Charge Doping Induced Reversible Multistep Structural Phase Transitions and Electromechanical Actuation in Two-Dimensional 1T'-Mos2.