Abstract:The reversible switching between the amorphous and crystalline phases of Ge 2 Sb 2 Te 5 (GST) is investigated with ab initio molecular dynamics. We apply different quench rates (-16 K/ps, -5 K/ps, -2 K/ps, and -0.45 K/ps) and different annealing temperatures (500 K, 600 K, 700 K, and 800 K) to amorphize and crystallize GST respectively. Results show that the generated amorphous is strongly dependent on the quench rate. For -16 K/ps and -5 K/ps, generated amorphous samples have different density of crystal seeds, higher in the later. The amorphous structure formed at -2 K/ps contains a single crystalline cluster, while that formed at the quench rate of -0.45 K/ps had sufficient time to completely crystallize the amorphous phase. Annealing the amorphous systems formed at different rates shows that crystallization depends both on the annealing temperature and on the structure of the initial system (i.e., whether or not it contains crystalline clusters or crystal seeds). At 500 K, formation of crystalline clusters occurs readily within a few ps while the rate at which they grow is slow, taking 0.9 ns to complete the crystallization. In contrast, crystalline cluster formation is inhibited at 800 K. In the intermediate temperature range, both crystalline cluster formation and growth occur within a few hundred ps indicating that these temperatures leads to the fastest crystallization. The crystallization of a 63-atom at ~900 K resulted in a highly relaxed crystal structure showing a clear tendency for separation of Ge and Sb species in layers. This model also indicates a tendency of segregation of vacancies, suggesting that vacancy layering may play a key role in the crystallization process.

Preparation and Characterization of Laser-Irradiation Induced Amorphous for Ge 2 Sb 2 Te 5 Phase-Change Materials

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation

FORMATION, STRUCTURE AND PROPERTIES OF HIGHLY ORDERED SUB-30-nm PHASE CHANGE MATERIALS (GST) NANOPARTICLE ARRAYS

Fast recovery of ion-irradiation-induced defects in Ge2Sb2Te5 thin films at room temperature

Study on X-ray irradiation induced effect of phase-change material Ge2Sb2Te5

Phase change of Ge 2 Sb 2 Te 5 under terahertz laser illumination

Artificial Anisotropy in Ge2Sb2Te5 Thin Films after Femtosecond Laser Irradiation

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

In situ atomic-scale observation of transformation from disordered to ordered layered structures in Ge-Sb-Te phase change memory thin films

Crystallization Process of in Situ Annealed Ge2Sb2Te5 Films

High‐Throughput Study of Amorphous Stability and Optical Properties of Superlattice‐Like Ge–Sb–Te Thin Films

Laser Induced Crystallization of As-Deposited Amorphous Ge2Sb2Te5 Films

Evolution of Short- and Medium-Range Order in the Melt-Quenching Amorphization of Ge2Sb2Te5

Transmission electron microscopy study of amorphous Ge 2 Sb 2 Te 5 films induced by an ultraviolet single-pulse laser

Fabrication and Phase Transition of Long-Range-ordered, High-Density GST Nanoparticle Arrays.

The Amorphization and Crystallization of Ge 2 Sb 2 Te 5 : an Ab Initio Molecular Dynamics Study

Phase Evolution and Amorphous Stability upon Solid-State Reaction in Superlattice-Like Ge–Sb–Te Combinatorial Thin Films

Study on the Crystallization by an Electrical Resistance Measurement in Ge2sb2te5 and N-Doped Ge2sb2te5 Films

Terahertz-infrared spectroscopy of Ge2Sb2Te5 films on sapphire: Evolution of broadband electrodynamic response upon phase transitions