Abstract:Abstract Superlattice-like (SLL) Ti/Sb thin films were proposed and investigated from the viewpoint of physical properties, structural characteristics, and electronic application. Magnetron sputtering was employed to deposit the SLL Ti/Sb thin films with different thickness ratios. In-situ resistance–temperature measurement indicates that the crystallization temperature, crystallization-activation energy, and data-retention capacity increase significantly and the resistance drift index reduces with an increment in thickness ratio of the Ti to Sb layer, meaning higher amorphous thermal stability and reliability of SLL Ti/Sb thin films. X-ray diffraction and Raman spectra reveal that the inserted Ti layer can inhibit grain growth and refine the grain size, causing remarkable improvement of thermal stability and crystalline resistance. Analyses of x-ray reflectivity and atomic force microscopy demonstrate that the thickness fluctuation of SLL Ti/Sb thin films becomes smaller and the surface topography becomes smoother, respectively. The Avrami exponent of the SLL (Ti 3 Sb 7 ) 5 thin film reflects the growth-dominated crystallization mechanism, implying a rapid phase transition speed. Phase-change memory cells based on the SLL (Ti 3 Sb 7 ) 5 thin film can realize a reversible SET/RESET operation under an electrical pulse with a width of 100 ns. The RESET power consumption was estimated to be much lower than that of traditional Ge 2 Sb 2 Te 5 material. The above results strongly prove that the suitable SLL structure of Ti/Sb thin films have tremendous potential in the area of high-temperature and low-power electronic storage.

Phase Evolution and Amorphous Stability upon Solid-State Reaction in Superlattice-Like Ge–Sb–Te Combinatorial Thin Films

High‐Throughput Study of Amorphous Stability and Optical Properties of Superlattice‐Like Ge–Sb–Te Thin Films

The Effect of Sputtering Sequence Engineering in Superlattice-like Sb-Rich-Based Phase Change Materials

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

Understanding the Growth and Properties of Sputter-Deposited Phase-Change Superlattice Films

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge 2 Sb 2 Te 5 Phase Change Thin Films

Uncovering the physical properties, structural characteristics, and electronic application of superlattice-like Ti/Sb phase-change thin films

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Origin of Short- and Medium-Range Order in Supercooled Liquid Ge3Sb2Te6 Using Ab Initio Molecular Dynamics Simulations.

Stability enhancement of the metastable cubic Sb2Te3 in supperlattice-like films

Atomic Layer Deposition of Sb2Te3/GeTe superlattice Film and Its Melt‐Quenching‐Free Phase Transition Mechanism for Phase‐Change Memory

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

METASTABLE PHASE FORMATION AND STRUCTURAL-CHANGE CHARACTERISTICS OF VAPOR-DEPOSITED SEMICONDUCTOR-FILMS

Phase and grain size engineering in Ge-Sb-Te-O by alloying with La-Sr-Mn-O towards improved material properties

Evolution of Short- and Medium-Range Order in the Melt-Quenching Amorphization of Ge2Sb2Te5

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Investigation of Crystallization Behavior and Structure of Nanocomposite Multilayer Phase Change Thin Films with Zinc Antimony and Germanium Antimony

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation

Inherent Simple Cubic Lattice Being Responsible for Ultrafast Solid-Phase Change of Ge2Sb2Te5