Abstract:The reversible switching between the amorphous and crystalline phases of Ge 2 Sb 2 Te 5 (GST) is investigated with ab initio molecular dynamics. We apply different quench rates (-16 K/ps, -5 K/ps, -2 K/ps, and -0.45 K/ps) and different annealing temperatures (500 K, 600 K, 700 K, and 800 K) to amorphize and crystallize GST respectively. Results show that the generated amorphous is strongly dependent on the quench rate. For -16 K/ps and -5 K/ps, generated amorphous samples have different density of crystal seeds, higher in the later. The amorphous structure formed at -2 K/ps contains a single crystalline cluster, while that formed at the quench rate of -0.45 K/ps had sufficient time to completely crystallize the amorphous phase. Annealing the amorphous systems formed at different rates shows that crystallization depends both on the annealing temperature and on the structure of the initial system (i.e., whether or not it contains crystalline clusters or crystal seeds). At 500 K, formation of crystalline clusters occurs readily within a few ps while the rate at which they grow is slow, taking 0.9 ns to complete the crystallization. In contrast, crystalline cluster formation is inhibited at 800 K. In the intermediate temperature range, both crystalline cluster formation and growth occur within a few hundred ps indicating that these temperatures leads to the fastest crystallization. The crystallization of a 63-atom at ~900 K resulted in a highly relaxed crystal structure showing a clear tendency for separation of Ge and Sb species in layers. This model also indicates a tendency of segregation of vacancies, suggesting that vacancy layering may play a key role in the crystallization process.

Inherent Simple Cubic Lattice Being Responsible for Ultrafast Solid-Phase Change of Ge2Sb2Te5

Direct Observation Of Partial Disorder And Zipperlike Transition In Crystalline Phase Change Materials

Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film

Photoinduced ultrafast transition of the local correlated structure in chalcogenide phase-change materials

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

A Body-Centered-Cubic Polymorph of the Ge2sb2te5 Phase Change Alloy

Direct observation of metastable face-centered cubic Sb 2 Te 3 crystal

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

Ultrafast Crystallization Mechanism of Amorphous Ge15Sb85 Unraveled by Pressure-Driven Simulations

Element-Resolved Atomic Structure Imaging Of Rocksalt Ge2sb2te5 Phase-Change Material

Insights into the Heterogeneous Nuclei of an Ultrafast‐Crystallizing Glassy Solid

Vacancy-mediated electronic localization and phase transition in cubic Sb2Te3

The Ultrafast Optical Response of the Amorphous and Crystalline States of the Phase Change Material Ge$_2$Sb$_2$Te$_5$

Crystallization Mechanism Tuned Phase-Change Materials: Quantum Effect on Te-Terminated Boundary

Evolution of Short- and Medium-Range Order in the Melt-Quenching Amorphization of Ge2Sb2Te5

Metastable Stacking-Polymorphism in Ge2Sb2Te5.

Tuning the Crystallization Mechanism by Composition Vacancy in Phase Change Materials

Unraveling the Crystallization Kinetics of the Ge$_2$Sb$_2$Te$_5$ Phase Change Compound with a Machine-Learned Interatomic Potential

In-situ Observation of Ge2Sb2Te5 Crystallization at the Passivated Interface

The Amorphization and Crystallization of Ge 2 Sb 2 Te 5 : an Ab Initio Molecular Dynamics Study