Abstract:Revealing the bonding and time-evolving atomic dynamics in functional materials with complex lattice structures can update the fundamental knowledge on rich physics therein, and also help to manipulate the material properties as desired. As the most prototypical chalcogenide phase change material, Ge2Sb2Te5 has been widely used in optical data storage and non-volatile electric memory due to the fast switching speed and the low energy consumption. However, the basic understanding of the structural dynamics on the atomic scale is still not clear. Using femtosecond electron diffraction, structure factor calculation and TDDFT-MD simulation, we reveal the photoinduced ultrafast transition of the local correlated structure in the averaged rock-salt phase of Ge2Sb2Te5. The randomly oriented Peierls distortion among unit cells in the averaged rock-salt phase of Ge2Sb2Te5 is termed as local correlated structures. The ultrafast suppression of the local Peierls distortions in individual unit cell gives rise to a local structure change from the rhombohedral to the cubic geometry within ~ 0.3 ps. In addition, the impact of the carrier relaxation and the large amount of vacancies to the ultrafast structural response is quantified and discussed. Our work provides new microscopic insights into contributions of the local correlated structure to the transient structural and optical responses in phase change materials. Moreover, we stress the significance of femtosecond electron diffraction in revealing the local correlated structure in the subunit cell and the link between the local correlated structure and physical properties in functional materials with complex microstructures.

Element-Resolved Atomic Structure Imaging Of Rocksalt Ge2sb2te5 Phase-Change Material

Vacancy Structures and Melting Behavior in Rock-Salt GeSbTe.

Weak antilocalization and disorder-enhanced electron interactions in crystalline GeSbTe

In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys

Materials Screening for Disorder‐Controlled Chalcogenide Crystals for Phase‐Change Memory Applications

In Situ Study of Vacancy Disordering in Crystalline Phase-Change Materials under Electron Beam Irradiation

Inherent Simple Cubic Lattice Being Responsible for Ultrafast Solid-Phase Change of Ge2Sb2Te5

A Review on Disorder-Driven Metal–Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials

Anderson localization of electrons in single crystals: Li (x) Fe(7)Se(8).

Atomic‐Scale Visualization and Quantification of Configurational Entropy in Relation to Thermal Conductivity: A Proof‐of‐Principle Study in T‐gesb2te4

Effects of Stoichiometry on the Transport Properties of Crystalline Phase-Change Materials

Photoinduced ultrafast transition of the local correlated structure in chalcogenide phase-change materials

Ab Initio Molecular Dynamics: Disorder Control in Crystalline GeSb2Te4 Using High Pressure (adv. Sci. 8/2015)

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

Disorder control in crystalline GeSb2Te4 and its impact on characteristic length scales

A Complicated Route from Disorder to Order in Antimony–Tellurium Binary Phase Change Materials

B23-O-14 Direct Observation the Vacant Sites in the GeSbTe Metastable Polycrystalline Phase

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

Vacancy-mediated electronic localization and phase transition in cubic Sb2Te3