Abstract:Chalcogenide alloys in pseudobinary line between Sb2Te3 and GeTe are extensively utilied in phase change memories for optical and electronic contrast between crystalline and amorphous phases. Different from the crystalline structure, the understanding of amorphous structures is still insufficient due to disorder and distortion. By employing first-principle molecular dynamics simulations and atomistic cluster alignment analysis, the short-range orders and the associated distortions of amorphous Sb2Te3, Ge1Sb2Te4, Ge2Sb2Te5, Ge3Sb2Te6 and GeTe are investigated to explore the origin of nature difference. The results reveal that GeGe and SbSb bonds present a notable competitive mechanism with GeTe content. The GeTe content has a great influence on Ge- and Te-centered short-range orders but little influence on the structures of Sb-centered clusters, especially for the octahedral sites and unidentified structures. The tetrahedrons in Ge-centered clusters of each alloy show a close proportion, but the fraction of tetrahedrons in total clusters increases with the increasing GeTe content due to the increase in the ratio of Ge atom. As for the distortions of clusters, the distorted tetrahedrons in Ge2Sb2Te5 are closest to the standard tetrahedron, the Peierls distortion of Ge-centered 6-fold octahedron reduces with an increase in GeTe content whereas that of Sb-centered 6-fold octahedron shows a little change. Additionally, it is found that GeTe content can inhibit the formation of nanocavity but contribute to the formation of the odd rings. Our findings deepens the understanding of amorphous structures, which can promote the design and application of phase-change materials.

B23-O-14 Direct Observation the Vacant Sites in the GeSbTe Metastable Polycrystalline Phase

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys

In situ atomic-scale observation of transformation from disordered to ordered layered structures in Ge-Sb-Te phase change memory thin films

Vacancy Structures and Melting Behavior in Rock-Salt GeSbTe.

Vacancy-mediated electronic localization and phase transition in cubic Sb2Te3

Probing the local environment of two-dimensional ordered vacancy structures in Ga2SeTe2 via aberration-corrected electron microscopy

Element-Resolved Atomic Structure Imaging Of Rocksalt Ge2sb2te5 Phase-Change Material

In‐Plane Twinning Defects in Hexagonal GeSb 2 Te 4

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

Atomic Structure and Dynamics of Unusual and Wide‐Gap Phase‐Change Chalcogenides: A GeTe2 Case

Effect of vacancy ordering on the grain growth of Ge2Sb2Te5 film

Element-specific Amorphization of Vacancy-Ordered GeSbTe for Ternary-State Phase Change Memory

The local structural differences in amorphous Ge-Sb-Te alloys

Theoretical and Experimental Investigations of the Optical Properties of Ge2sb2te5 for Multi-State Optical Data Storage

Study of vacancy ordering and the boson peak in metastable cubic Ge-Sb-Te using machine learning potentials

A Study on Inorganic Phase-Change Resist Ge2Sb2(1-x)Bi2xTe5 and Its Mechanism.

Valence Band Structure of Chalcogenide Obtained by X‐Ray Photoelectron Spectroscopy and Etching Technique