Abstract:Ternary alloys of Ge-Sb-Te (GST) have been extensively studied due to their unique ability display a reversible change in their phase upon stimulation by optical pulses i.e., amorphous (a-GST) to crystalline (c-GST) and vice-versa. The two phases exhibit remarkably different electrical and optical properties like conductivity, reflectivity, refractive index and optical loss, this coupled with their high phase switching speeds, low power phase switching, large measurable optical and electrical contrast, and phase stability makes GST alloys stand out from other phase change materials (PCM). GST alloys have already found extensive use in optical disks and electronic memories due to their non-volatility and zero static power consumption, but the precise mechanism of the phase change is not clearly understood. The phase change mechanism has usually been attributed to the optical pulse, usually a high power short pulse laser, heating up the c-GST alloy to above its melting temperature (Tm) after which, if it is cooled rapidly enough to below the glass transition temperature (Tg), the atoms are fixed in place due to the drastic reduction in their mobility, resulting in a phase which exhibits structure similar to a frozen liquid and lacks long range order i.e. amorphous. When heated above Tg with an intermediate power laser pulse for a significant amount of time, then this favors the shift back to the energetically favorable crystalline phase. With the growing interest in next generation data storage technology for photonic and neuromorphic computing, the research into understanding and improving the properties of GST alloys has also been rekindled. In this term paper we hope to investigate and gain a deeper understanding and appreciation of the kinetics and underlying atomistic mechanism of this phase transition from c-GST to a-GST and vice-versa which is only now becoming clearer.

Theoretical and Experimental Investigations of the Optical Properties of Ge2sb2te5 for Multi-State Optical Data Storage

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Amorphous structure melt-quenched from defective Ge 2 Sb 2 Te 5

Direct Observation Of Partial Disorder And Zipperlike Transition In Crystalline Phase Change Materials

Unique Melting Behavior In Phase-Change Materials For Rewritable Data Storage

An Investigation into the Kinetics and Mechanism of Phase Transitions in Optical Phase Change Ternary Alloy $Ge_2Sb_2Te_5$

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Multi-State Data Storage of Ge2sb2te5/Ga30sb70 Multilayer Films for Phase Change Memory

Femtosecond structural transformation of phase-change materials far from equilibrium monitored by coherent phonons

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Local structure of liquid Ge1Sb2Te4 for rewritable data storage use

Direct observation of amorphous to crystalline phase transitions in Ge–Sb–Te thin films by grazing incidence X-ray diffraction method

The Relationship between Electron Transport and Microstructure in Ge2Sb2Te5 Alloy

Element-specific Amorphization of Vacancy-Ordered GeSbTe for Ternary-State Phase Change Memory

Structural and electronic characteristics of amorphous Ge8Sb2Te11

Crystallization Properties of the Ge2Sb2Te5 Phase‐Change Compound from Advanced Simulations

Lattice Thermal Conductivity of M GeTe • N Sb 2 Te 3 Phase-Change Materials : A First-Principles Study

First principles study of the optical contrast in phase change materials

A Body-Centered-Cubic Polymorph of the Ge2sb2te5 Phase Change Alloy

Ultrafast optical manipulation of atomic arrangements in chalcogenide alloy memory materials

Nanoscale multilevel switching in Ge2Sb2Te5 thin film with conductive atomic force microscopy.