Abstract:Ge-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing. Of particular interest is the understanding of the structural changes and underlying mechanisms induced by short optical pulses. This work reports on structural changes induced by single nanosecond UV laser pulses in amorphous and epitaxial Ge2Sb2Te5 (GST) thin films. The phase changes within the thin films are studied by a combined approach using X-ray diffraction and transmission electron microscopy. The results reveal different phase transitions such as crystalline-to-amorphous phase changes, interface assisted crystallization of the cubic GST phase and structural transformations within crystalline phases. In particular, it is found that crystalline interfaces serve as crystallization templates for epitaxial formation of metastable cubic GST phase upon phase transitions. By varying the laser fluence, GST thin films consisting of multiple phases and different amorphous to crystalline volume ratios can be achieved in this approach, offering a possibility of multilevel data storage and realization of memory devices with very low resistance drift. In addition, this work demonstrates amorphization and crystallization of GST thin films by using only one UV laser with one single pulse duration and one wavelength. Overall, the presented results offer new perspectives on switching pathways in Ge-Sb-Te-based materials and show the potential of epitaxial Ge-Sb-Te thin films for applications in advanced phase change memory concepts.

Nanoscale multilevel switching in Ge2Sb2Te5 thin film with conductive atomic force microscopy.

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Conductive Atomic Force Microscopy (C-AFM) Observation of Conducting Nanofilaments Formation in GeSbTe Phase Change Materials

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

In situ atomic-scale observation of transformation from disordered to ordered layered structures in Ge-Sb-Te phase change memory thin films

Theoretical and Experimental Investigations of the Optical Properties of Ge2sb2te5 for Multi-State Optical Data Storage

Multiple-state Storage Capability of Nitrogen-Doped Ge2Sb2Te5 Film for Phase Change Memory

Electronic Properties of GST for Non-Volatile Memory

Understanding the multistate SET process in Ge-Sb-Te-based phase-change memory

Nanomechanical morphology of amorphous, transition, and crystalline domains in phase change memory thin films

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

The Relationship between Electron Transport and Microstructure in Ge2Sb2Te5 Alloy

Enhanced Threshold Voltage of Zn-doped Ge2Sb2Te5phase-change Memory Deposited by Electron-Beam Evaporation

Crystallization behavior of MnTe/GeTe stacked thin films for multi-level phase change memory

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Characterization of Ge2Sb2Te5 Thin Film Transistor and Its Application in Non-Volatile Memory

Nitrogen-doped Ge 2 Sb 2 Te 5 films for nonvolatile memory

Metal-Insulator Transition of Ge-Sb-Te Superlattice: an Electron Counting Model Study

Fabrication and Phase Transition of Long-Range-ordered, High-Density GST Nanoparticle Arrays.

Enhanced Threshold Voltage Of Zn-Doped Ge2sb2te5 Phase-Change Memory Deposited By Electron-Beam Evaporation

Ultrafast optical manipulation of atomic arrangements in chalcogenide alloy memory materials