Abstract:Ge-Sb-Te-based phase-change memory is one of the most promising candidates to succeed the current flash memories. The application of phase-change materials for data storage and memory devices takes advantage of the fast phase transition (on the order of nanoseconds) and the large property contrasts (e.g., several orders of magnitude difference in electrical resistivity) between the amorphous and the crystalline states. Despite the importance of Ge-Sb-Te alloys and the intense research they have received, the possible phases in the temperature-pressure diagram, as well as the corresponding structure-property correlations, remain to be systematically explored. In this study, by subjecting the amorphous Ge(2)Sb(2)Te(5) (a-GST) to hydrostatic-like pressure (P), the thermodynamic variable alternative to temperature, we are able to tune its electrical resistivity by several orders of magnitude, similar to the resistivity contrast corresponding to the usually investigated amorphous-to-crystalline (a-GST to rock-salt GST) transition used in current phase-change memories. In particular, the electrical resistivity drops precipitously in the P = 0 to 8 GPa regime. A prominent structural signature representing the underlying evolution in atomic arrangements and bonding in this pressure regime, as revealed by the ab initio molecular dynamics simulations, is the reduction of low-electron-density regions, which contributes to the narrowing of band gap and delocalization of trapped electrons. At P > 8 GPa, we have observed major changes of the average local structures (bond angle and coordination numbers), gradually transforming the a-GST into a high-density, metallic-like state. This high-pressure glass is characterized by local motifs that bear similarities to the body-centered-cubic GST (bcc-GST) it eventually crystallizes into at 28 GPa, and hence represents a bcc-type polyamorph of a-GST.

Multiple-state Storage Capability of Nitrogen-Doped Ge2Sb2Te5 Film for Phase Change Memory

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance

Nitrogen-doped Ge 2 Sb 2 Te 5 films for nonvolatile memory

Nitrogen-doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> films for nonvolatile memory

Stacked chalcogenide layers used as multi-state storage medium for phase change memory

Outstanding phase-change behaviors of GaGeSbTe material for phase-change memory application

Multiple-State Storage Capability of Stacked Chalcogenide Films (si 16 Sb 33 Te 51 /si 4 Sb 45 Te 51 /si 11 Sb 39 Te 50 ) for Phase Change Memory

Enhanced Threshold Voltage Of Zn-Doped Ge2sb2te5 Phase-Change Memory Deposited By Electron-Beam Evaporation

Enhanced Threshold Voltage of Zn-doped Ge2Sb2Te5phase-change Memory Deposited by Electron-Beam Evaporation

Compositionally Matched Nitrogen-Doped Ge2Sb2Te5/Ge2Sb2Te5 Superlattice-Like Structures for Phase Change Random Access Memory

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

Si Doping in Ge2Sb2Te5 Film to Reduce the Writing Current of Phase Change Memory

Direct observation of phase-change volume in contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material

Improved Phase-Change Characteristics of Si Doped Gesbte Thin Films Used for Phase Change Memory

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge 2 Sb 2 Te 5 Phase Change Thin Films

Characteristics of phase transition in boron-implanted Ge<sub>2</sub> Sb<sub>2</sub> Te<sub>5</sub> thin films for phase change memory applications

High thermal stability and fast operation speed phase-change memory devices containing Hf-doped Ge2Sb2Te5 films

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Dependence Of The Properties Of Phase Change Random Access Memory On Nitrogen Doping Concentration In Ge2sb2te5

Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy