Abstract:Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by doping the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory.

The Effect of Sputtering Sequence Engineering in Superlattice-like Sb-Rich-Based Phase Change Materials

Phase Evolution and Amorphous Stability upon Solid-State Reaction in Superlattice-Like Ge–Sb–Te Combinatorial Thin Films

High‐Throughput Study of Amorphous Stability and Optical Properties of Superlattice‐Like Ge–Sb–Te Thin Films

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

Uncovering the physical properties, structural characteristics, and electronic application of superlattice-like Ti/Sb phase-change thin films

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge 2 Sb 2 Te 5 Phase Change Thin Films

Understanding the Growth and Properties of Sputter-Deposited Phase-Change Superlattice Films

Gete/Crsb2te Superlattice-Like Thin Film for Excellent Thermal Stability and High Phase Change Speed

Configuration Effects of Superlattice‐like Phase Change Material Structure

Development of Sb phase change thin films with high thermal stability and low resistance drift by alloying with Se

Designing Sb phase change materials by alloying with Ga 2 S 3 towards high thermal stability and low resistance drift by bond reconfigurations

Performance optimization of Sn15Sb85 phase change material via introducing multilayer structure

Stability enhancement of the metastable cubic Sb2Te3 in supperlattice-like films

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

GeTe/Sb7Te3 Superlatticelike Structure for Lateral Phase Change Memory

Study on the crystallization of Mg35Sb65/Sn15Sb85 superlattice-like films for phase change memory application

Low Thermal Conductivity Phase Change Memory Superlattices

Study of the Superlattice-Like Phase-Change Optical Recording Disks

Monatomic Sb thin films alloyed with Sb2S3 enables superior thermal stability and resistance drift by spontaneous self-decomposition

Controllable single phase enables superior thermal stability in Sb-Sn-S films

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb 2 Te 3 Phase-Change Thin Film by Inserting Sn 15 Sb 85 Layers