Abstract:Ge-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing. Of particular interest is the understanding of the structural changes and underlying mechanisms induced by short optical pulses. This work reports on structural changes induced by single nanosecond UV laser pulses in amorphous and epitaxial Ge2Sb2Te5 (GST) thin films. The phase changes within the thin films are studied by a combined approach using X-ray diffraction and transmission electron microscopy. The results reveal different phase transitions such as crystalline-to-amorphous phase changes, interface assisted crystallization of the cubic GST phase and structural transformations within crystalline phases. In particular, it is found that crystalline interfaces serve as crystallization templates for epitaxial formation of metastable cubic GST phase upon phase transitions. By varying the laser fluence, GST thin films consisting of multiple phases and different amorphous to crystalline volume ratios can be achieved in this approach, offering a possibility of multilevel data storage and realization of memory devices with very low resistance drift. In addition, this work demonstrates amorphization and crystallization of GST thin films by using only one UV laser with one single pulse duration and one wavelength. Overall, the presented results offer new perspectives on switching pathways in Ge-Sb-Te-based materials and show the potential of epitaxial Ge-Sb-Te thin films for applications in advanced phase change memory concepts.

METASTABLE PHASE FORMATION AND STRUCTURAL-CHANGE CHARACTERISTICS OF VAPOR-DEPOSITED SEMICONDUCTOR-FILMS

Thermal And Laser-Induced Phase-Transformation In Rf-Sputtered Gesb2te4 Thin-Films

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Microstructural changes of phase change GeSb2Te4 thin film in short-wavelength optical storage

Study of Structural and Electrical Properties of Phase-Change Materials Ge1Sb2Te4 and Ge2Sb2Te5 Thin Films

Theoretical explanation of different crystallization processes between as-deposited and melt-quenched amorphous Ge2Sb2Te5 thin films

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Phase Evolution and Amorphous Stability upon Solid-State Reaction in Superlattice-Like Ge–Sb–Te Combinatorial Thin Films

Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy

Laser-induced crystallization behavior of the sputtered Ge2Sb2Te5 film

Investigation of Crystallization Behavior and Structure of Nanocomposite Multilayer Phase Change Thin Films with Zinc Antimony and Germanium Antimony

High‐Throughput Study of Amorphous Stability and Optical Properties of Superlattice‐Like Ge–Sb–Te Thin Films

Structure and Crystallization Kinetics of as‐deposited Films of the GeTe Phase Change Compound from Atomistic Simulations

Chemical segregation in Ge2Sb2Te5 thin films during in-situ heating

Understanding the Growth and Properties of Sputter-Deposited Phase-Change Superlattice Films

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

Temperature-dependent phase separation during annealing of Ge 2 Sb 2 Te 5 thin films in vacuum

Short-wavelength phase-change optical data storage in In-Sb-Te alloy films

Medium-range structural order in amorphous Ge2Sb2Te5 phase change material