FORMATION, STRUCTURE AND PROPERTIES OF HIGHLY ORDERED SUB-30-nm PHASE CHANGE MATERIALS (GST) NANOPARTICLE ARRAYS

Yuanbao Liao,Jiajia Wu,Ling Xu,Fei Yang,Wenqing Liu,Jun Xu,Liangcai Wu,Zhongyuan Ma,Kunji Chen
DOI: https://doi.org/10.1142/s0218625x10014259
2010-01-01
Surface Review and Letters
Abstract:Chalcogenide phase change material Ge 1 Sb 2 Te 4 (GST) nanoparticle arrays with long-range-order were fabricated by using a monolayer of self-assembled polystyrene (PS) spheres as mask. The morphology of nanoparticle arrays can be controlled via changing RIE processing conditions. Images of atomic force microscopy (AFM) and scanning electron microscopy (SEM) show that highly uniform GST nanoparticle arrays with particle density around 10 9 cm -2 were formed. The sizes of nanoparticles can be reduced to a tiny diameter in the range of 30–40 nm (top diameter). The GST nanoparticle arrays exhibit a prominent peak near 580 nm in reflectance spectra, which indicates that they possess a photonic band gap. These results confirm that GST nanoparticle arrays have a 2D periodicity and long-range order. The method of nanosphere lithograph may apply to manufacturing of high density memory devices based on phase change-based memory materials.
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