Abstract:The Ovonic Threshold Switching (OTS) selector serves as an essential component in the development of three-dimensional high-density memory integration technology. Nevertheless, the state-of-the-art high-performance OTS materials usually contain toxic elements such as arsenic (As), posing significant risks to both environmental and human health. Nitrogen (N), which belongs to the same group as arsenic (As), has emerged as a highly promising alternative for As doping. However, the underlying mechanisms that govern N-based OTS materials have not yet been extensively investigated. In this study, we delve into the effects of N doping on the structural, bonding, and electronic properties of amorphous GeSe (a-GeNSe) by ab initio molecular dynamics simulations to bridge the knowledge gap. Our findings indicate that upon N doping in a-GeSe, the formation of robust Ge-N bonds, along with N-centered tetrahedral and triangular structures, resulting in the sluggish atomic movement that enhances the thermal stability and endurance of a-GeNSe. The OTS characteristics are significantly influenced by the material’s electronic band structure, and thus the relatively slow performance drift can be attributed to the stabilization of mid-gap states, a result of N doping which effectively slows down the aging process of chalcogenide glass. Moreover, the increased mobility gap in a-GeNSe raises the threshold voltage (Vth), making it more compatible with commercially available phase-change memory materials. Our findings reveal the extensive impact of the N element on a typical OTS material and offer valuable perspectives for alternative doping strategies that could potentially supplant As practices.

Atomic-scale investigation on endurance mechanism of the GeTe x -based OTS device by Si doping

Unravelling the Atomic Mechanisms of Tetrahedral Doping in Chalcogenide Glass for Electrical Switching Materials

Modified electronic structure of amorphous Mn‐Si‐Te for OTS application: Improved thermal stability by the formation of Mn‐Te bonding

Revealing the Structure and Electronic Characteristics of Te-rich Threshold Switching Materials for High-Density Integration

Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and Scalability

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Nitrogen: a Promising Doping Strategy for High-Performance Ovonic Threshold Switching Selectors

Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Insight into the Role of Oxygen in Phase-Change Material GeTe

From Stoichiometric to Off-stoichiometric GeTe: Phase Diagram Reconstruction and Thermoelectric Performance Reassessment

Crystal Symmetry Induced Structure and Bonding Manipulation Boosting Thermoelectric Performance of GeTe

Improved Electrical Characteristics of Field Effect Transistors with GeSeTe-Based Ovonic Threshold Switching Devices

Intensive Structural Disorder Induces Electronic Delocalization: Amorphous Solid‐Liquid Transition in Ovonic Threshold Switching Materials

Manipulation of Dangling Bonds of Interfacial States Coupled in GeTe-rich GeTe/Sb2Te3 Superlattices

Functionally Separated Electronic Band Engineering Via Multi-Element Doping Plus High-Density Defects Advances Board-Temperature-range Thermoelectric Performance in GeTe

Structure, bonding and electronic characteristics of amorphous Se

The Investigations of Characteristics of GeSe Thin Films and Selector Devices for Phase Change Memory

Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices.