Abstract:As a promising spiking neuron candidate, ovonic threshold switching (OTS) selector with ultralow leakage current is deeply desired for neuromorphic computing. Systematic material screening of chalcogenides from the periodical table of elements is performed using three essential criteria‐few elements, wide band gap, and high crystallization temperature. Binary GaS‐based OTS device is singled out as the most appealing one.Neuromorphic computing implemented with spiking neural networks is an energy efficient computing paradigm to break through the Von Neumann bottleneck in the future. Ovonic threshold switching (OTS) selector is considered to be a promising spiking neuron candidate. As ≈1011 artificial neurons are needed for brain‐inspired computing, leakage current of OTS devices would waste enormous power. OTS devices with ultralow leakage current are deeply desired. Since the leakage current is closely related to the bandgap of OTS materials and only the amorphous one shows the volatile switching property, here binary gallium sulfide (GaS), characterized by 2.53 eV large band‐gap and ≈550 °C high crystallization temperature is singled out, as the most appealing OTS material. High‐density trap states, an essential prerequisite of the OTS material, are detected in the amorphous GaS. Indeed, the OTS behaviors of the GaS‐based device are directly observed. The simple OTS device could provide 21.23 MA cm−2 large ON current density, and ≈10−8 A low OFF current and ≤10 ns switching speed. Furthermore, it is also used to build GaS‐based leakage integrate and fire neurons for future neuromorphic computing. This study provides a new idea for material design before device preparation and takes a neuron as an example.

Chalcogenide Ovonic Threshold Switching Selector

Chalcogenide Selector Devices and Their Non-Linear Conduction Process

Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices.

Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device

Structural Features of Chalcogenide Glass SiTe: an Ovonic Threshold Switching Material

Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and Scalability

Three-dimensional Ovonic Threshold Switching Model with Combination of In-Band and Trap-to-band Hopping Mechanism for Chalcogenide-Based Phase-Change Memory

Monatomic Phase-Change Switch

Sb‐Se‐based Electrical Switching Device with Fast Transition Speed and Minimized Performance Degradation Due to Stable Mid‐gap States

Indium turns tellurium into an ovonic threshold switching selector via a stabilizing amorphous network

First-principles screening for sustainable OTS materials

Transient Structural Transition in Ovonic Threshold Switching Glass

Electronic Excitation-Induced Semiconductor-Metal Transitions Enabling Ovonic Threshold Switching in Boron Telluride Glasses

Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory

Unravelling the Atomic Mechanisms of Tetrahedral Doping in Chalcogenide Glass for Electrical Switching Materials

Screening Switching Materials with Low Leakage Current and High Thermal Stability for Neuromorphic Computing

The enhanced performance of a Si–As–Se ovonic threshold switching selector

A Physical Model of Ovonic Threshold Switching Effect for Phase Change Memory Based on the Trap-to-band Transition Mechanism

High-performance Graphene-Integrated Thermo-Optic Switch: Design and Experimental Validation [Invited]

Structural Changes During the Switching Transition of Chalcogenide Selector Devices

Ovonic threshold switching selectors for three-dimensional stackable phase-change memory